IAUCN08S7L110ATMA1 vs BSC076N04NDATMA1 Perbandingan
Perbandingan bersamaan detil IAUCN08S7L110ATMA1 dari Infineon dan BSC076N04NDATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IAUCN08S7L110ATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | 2x N-Channel MOSFET array |
| Drain-Source Voltage (V<sub>DS</sub>) | 80 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>j</sub>) | 50 A | — |
| Maximum Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) | 58 W | — |
| R<sub>DS(on)</sub> (typ., V<sub>GS</sub>=10 V) | 11 mΩ | — |
| Gate-Source Voltage (V<sub>GS</sub>) max | [DATA_NEEDED: V_GS_max] | — |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | [DATA_NEEDED: V_GS_th] | — |
| Total Gate Charge (Q<sub>G</sub>) | [DATA_NEEDED: Q_G_total] | — |
| Suhu Hubung Kerja | -55 °C to +175 °C | -55 C to +175 C |
| Paket | PG-TDSON-8-34 (TDSON-8) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | OptiMOS™ (Trench) | Trench MOSFET (OptiMOS 3) |
| Level MSL | [DATA_NEEDED: MSL level] | — |
| Status RoHS | Compliant | — |
| Automotive Qualified | Yes (AEC-Q101 expected per family) | — |
| Polarity | Single N-Channel | — |
| Configuration | Single | Dual N-Channel (independent MOSFETs) |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 3 |
| Drain-Source Voltage (VDS) max | — | 40 V |
| Continuous Drain Current (ID) | — | 20 A (Tc) |
| Gate Threshold Voltage (VGS(th)) | — | 4 V (max, typical) |
| On-Resistance RDS(on) max | — | 7.6 mOhm |
| Power Dissipation (Ta) | — | 2.3 W |
| Power Dissipation (Tc) | — | 65 W |
| Qgd/Qgs Ratio | — | < 0.8 (high shot-through immunity) |
| Paket / Case | — | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | — | Compliant (Pb-free plating) |