IAUS300N08S5N011TATMA1 vs IQE220N15NM5ATMA1 Comparison
Detailed side-by-side comparison of IAUS300N08S5N011TATMA1 by Infineon and IQE220N15NM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUS300N08S5N011TATMA1 - 80V 300A 1.1mOhm OptiMOS-5 MOSFET | Infineon
IAUS300N08S5N011TATMA1 β ActiveInfineon
IQE220N15NM5ATMA1
IQE220N15NM5ATMA1 - 150V N-Ch OptiMOS 5 MOSFET | Infineon
IQE220N15NM5ATMA1 β ActiveSpecification Comparison
| Parameter | IAUS300N08S5N011TATMA1 | IQE220N15NM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.65 | $0.84 |
| FET Type | N-Channel | β |
| Technology | OptiMOS-5 (trench MOSFET) | Trench MOSFET (OptiMOS 5) |
| Drain-Source Voltage (V_DS) | 80 V | β |
| Continuous Drain Current (I_D, Tj) | 300 A | β |
| Power Dissipation (P_D, Tc) | 375 W | β |
| R_DS(on) Max @ V_GS=10V | 1.1 mOhm | β |
| Gate Threshold Voltage (V_GS(th)) | 3 V (max) | β |
| Total Gate Charge (Q_G) @ 10V | 231 nC | β |
| Output Capacitance (C_OSS) | 130 pF (typ) | β |
| Reverse Transfer Capacitance (C_RSS) | 16.25 nF (typ) | β |
| Operating Temperature Range | -55 C to +175 C (Tj) | β |
| Package | PG-HDSOP-16-2 (HDSOP-16) | PG-TSON-8-5 (Source-Down) |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Channels | 1 | β |
| RoHS Status | Compliant | Compliant |
| Automotive Qualified | Yes (Infineon automotive part) | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 5 Power-Transistor |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) Max | β | 150 V |
| Continuous Drain Current (ID) at Ta | β | 7 A |
| Continuous Drain Current (ID) at Tc | β | 44 A |
| Power Dissipation (PD) at Ta | β | 2.5 W |
| Power Dissipation (PD) at Tc | β | 100 W |
| RDS(on) Max at VGS=10V | β | 22 mΞ© |
| Gate Threshold Voltage (VGS(th)) | β | 4.6 V (typ at 46 Β΅A) |
| Total Gate Charge (Qg) | β | 14.4 nC at 10 V |
| Input Capacitance (Ciss) | β | 14 pF |
| Output Capacitance (Coss) | β | 340 pF |
| Output Configuration | β | Single N-Channel |
| Operating Temperature | β | -55C to +150C (junction) |
| MSL Level | β | 1 |