IAUS300N08S5N011TATMA1 - 80V 300A 1.1mOhm OptiMOS-5 MOSFET | Infineon
MPN: IAUS300N08S5N011TATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.2 | $4.20 |
| 10 | $3.78 | $37.80 |
| 100 | $3.36 | $336.00 |
| 500 | $2.95 | $1,475.00 |
| 1,000 | $2.65 | $2,650.00 |
IAUS300N08S5N011TATMA1 Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch that uses an electric field at the gate to control current flow between drain and source. In the broader semiconductor taxonomy, MOSFETs sit within discrete semiconductors, then power transistors, and finally power management switches. N-channel enhancement-mode MOSFETs like this one are the workhorse of high-efficiency synchronous rectification, motor drive, and DC-DC conversion because their low on-resistance minimizes conduction loss and their fast switching speeds shrink magnetics and capacitors. The OptiMOS-5 family is Infineon's fifth-generation 80-300 V platform optimized for automotive 48 V boardnet, mild-hybrid e-machines, and high-current telecom bricks.
Key headline specifications include: 1.1 mOhm maximum R_DS(on) at V_GS = 10 V, 231 nC total gate charge (Q_G) at 10 V, 130 pF typical C_OSS, 3 V maximum gate-threshold voltage, and 16.25 nF typical C_RSS. The PG-HDSOP-16-2 package is a wettable-flank, dual-side-cooling SMD outline designed for high-current automotive PCB assemblies with Kelvin-source connection.
The device uses Infineon's advanced OptiMOS-5 trench cell architecture with a 75 V to 120 V optimized voltage class. The 1.1 mOhm R_DS(on) per cell combined with low Q_G reduces both conduction and switching losses, enabling high-frequency operation above 100 kHz in 48 V-to-12 V or 48 V-to-3.3 V point-of-load converters used in mild-hybrid vehicles.
Typical applications include 48 V mild-hybrid e-machines, electric power steering (EPS), 48 V DC-DC converters, high-current brushless DC motor drives, and automotive battery disconnect switches. The wide 80 V rating also makes it suitable for industrial 48 V telecom bricks and solar micro-inverters where a low on-resistance is critical to maintain efficiency at high load current.
When designing with this MOSFET, ensure the gate driver can source and sink sufficient peak current (typically 1-2 A) to charge the 231 nC Q_G quickly and minimize switching loss. The Kelvin-source pin (pin 4) must be connected directly to the driver ground return to suppress source-inductance-induced gate ringing and prevent shoot-through in half-bridge topologies.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, helping engineers select and source the IAUS300N08S5N011TATMA1 for automotive and industrial 48 V power applications.
Drop-in alternatives for IAUS300N08S5N011TATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IAUS300N08S5N011TATMA1 (same form factor and footprint) — differing in Package, Technology, Operating Temperature Range, MSL Level, Avalanche Energy Rated.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IAUT300N08S5N011ATMA1
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View Datasheet →ISZ230N10NM6ATMA1
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View Datasheet →IQE220N15NM5ATMA1
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View Datasheet →BSC050N04LSGATMA1
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View Datasheet →IAUS300N08S5N011TATMA1 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Technology | OptiMOS-5 (trench MOSFET) |
| Drain-Source Voltage (V_DS) | 80 V |
| Continuous Drain Current (I_D, Tj) | 300 A |
| Power Dissipation (P_D, Tc) | 375 W |
| R_DS(on) Max @ V_GS=10V | 1.1 mOhm |
| Gate Threshold Voltage (V_GS(th)) | 3 V (max) |
| Total Gate Charge (Q_G) @ 10V | 231 nC |
| Output Capacitance (C_OSS) | 130 pF (typ) |
| Reverse Transfer Capacitance (C_RSS) | 16.25 nF (typ) |
| Operating Temperature Range | -55 C to +175 C (Tj) |
| Package | PG-HDSOP-16-2 (HDSOP-16) |
| Mounting Type | Surface Mount |
| Number of Channels | 1 |
| RoHS Status | Compliant |
| Automotive Qualified | Yes (Infineon automotive part) |
IAUS300N08S5N011TATMA1 Pin Configuration
| Pin 1 | GATE — Gate drive input (Kelvin gate) |
| Pin 2 | DRAIN — Drain (main power terminal, connected to exposed pad) |
| Pin 3 | DRAIN — Drain (main power terminal) |
| Pin 4 | SOURCE (Kelvin) — Kelvin-source connection to gate driver return |
| Pin 5 | DRAIN — Drain (main power terminal) |
| Pin 6 | DRAIN — Drain (main power terminal) |
| Pin 7 | NC — Not connected (per datasheet) |
| Pin 8 | NC — Not connected (per datasheet) |
| Pin 9 | NC — Not connected (per datasheet) |
| Pin 10 | NC — Not connected (per datasheet) |
| Pin 11 | DRAIN — Drain (main power terminal) |
| Pin 12 | DRAIN — Drain (main power terminal) |
| Pin 13 | NC — Not connected (per datasheet) |
| Pin 14 | NC — Not connected (per datasheet) |
| Pin 15 | NC — Not connected (per datasheet) |
| Pin 16 | NC — Not connected (per datasheet) |
Safe Operating Area (DC, Tj=175C)
Typical Applications
IAUS300N08S5N011TATMA1 is suitable for 7 applications: 48V Mild-Hybrid E-Machine Drive, 48V-to-12V DC-DC Converter (High-Current Buck), Electric Power Steering (EPS) System, Industrial 48V Telecom Brick (Isolated DC-DC), High-Current Brushless DC (BLDC) Motor Drive, Solar Micro-Inverter / Power Optimizer, Battery Disconnect Switch (48V Automotive).
48V Mild-Hybrid E-Machine Drive
The IAUS300N08S5N011TATMA1 is purpose-built for 48 V mild-hybrid e-machine inverter stages. Its 1.1 mOhm R_DS(on) at 10 V V_GS minimizes conduction loss in the synchronous rectification stage, which directly translates to higher inverter efficiency and longer e-motor range. The 300 A continuous drain current handles peak torque demands during launch assist, while the 80 V V_DS rating provides ample margin above the 48 V boardnet (including load-dump transients up to ~70 V). The PG-HDSOP-16-2 package supports dual-side cooling, essential for absorbing 375 W of dissipation at 100+ A RMS motor current. Per the Infineon OptiMOS-5 datasheet, switching losses are minimized at 100 kHz PWM, enabling smaller magnetics in the DC-link filter.
Recommended
48V-to-12V DC-DC Converter (High-Current Buck)
In 48 V-to-12 V buck converters for mild-hybrid vehicles, the IAUS300N08S5N011TATMA1 serves as the high-side and low-side synchronous switch. Its 1.1 mOhm R_DS(on) keeps full-load efficiency above 96% at 50 A output current, and the 231 nC total gate charge keeps switching losses low at 200 kHz operation, allowing the use of small ceramic output capacitors. The 80 V V_DS rating provides substantial headroom above 48 V nominal, surviving 60 V load-dump and jump-start events without avalanche. The PG-HDSOP-16-2 package's Kelvin-source pin (pin 4) connects directly to the gate-driver return, eliminating source-inductance-induced gate bounce that would otherwise limit switching frequency.
Recommended
Electric Power Steering (EPS) System
Electric power steering demands 50-80 A peak motor current with very low audible noise and 100,000+ hour reliability. The IAUS300N08S5N011TATMA1 supports EPS inverter stages with its 1.1 mOhm R_DS(on) reducing I^2R losses and extending battery range. The 175 C maximum junction temperature provides thermal headroom for engine-bay mounting, and the automotive-grade qualification of this OptiMOS-5 part meets OEM PPAP requirements. Switching at 20-50 kHz, well below the audible band, prevents motor whine, and the PG-HDSOP-16-2 package's mechanical robustness survives under-hood vibration. The device's 80 V V_DS rating comfortably handles the 12 V or 48 V boardnet with full load-dump margin.
Recommended
Industrial 48V Telecom Brick (Isolated DC-DC)
Telecom 48 V isolated brick converters benefit from the IAUS300N08S5N011TATMA1's 300 A current capability and 1.1 mOhm R_DS(on) in the primary-side full-bridge topology. The 80 V V_DS rating matches telecom bus voltages with margin for transients, while the OptiMOS-5's 231 nC Q_G allows >100 kHz switching for reduced transformer size. The PG-HDSOP-16-2 package handles 375 W dissipation, sufficient for 1-3 kW telecom brick outputs when paralleled. The wettable-flank package enables automated optical inspection, critical for high-volume telecom OEM manufacturing. The device's automotive-grade silicon also provides the reliability margin telecom operators expect for 10+ year service life.
Recommended
High-Current Brushless DC (BLDC) Motor Drive
Three-phase BLDC motor drives for industrial pumps, fans, and e-bikes require 100-300 A peak phase current at 24-72 V bus voltages. The IAUS300N08S5N011TATMA1 is a strong fit with its 1.1 mOhm R_DS(on) and 300 A continuous rating. The 80 V V_DS supports 72 V battery packs with margin, and the OptiMOS-5 231 nC Q_G enables sensorless FOC at 30-60 kHz PWM for smooth torque. The PG-HDSOP-16-2 package's exposed pad connects to substantial copper pours on both top and bottom layers, supporting continuous motor current without thermal throttling. Per Infineon's automotive-grade characterization, the device is qualified for industrial servo and traction applications.
Recommended
Solar Micro-Inverter / Power Optimizer
Solar micro-inverters and module-level power optimizers operate from 30-80 V DC PV inputs and need high-current synchronous rectification. The IAUS300N08S5N011TATMA1's 1.1 mOhm R_DS(on) maximizes conversion efficiency (>98%) at full sun, directly increasing energy yield. The 80 V V_DS rating handles open-circuit PV voltage with substantial safety margin, and the OptiMOS-5 silicon's low reverse-recovery charge reduces switching loss in the high-frequency stage. The PG-HDSOP-16-2 package's compact 16-pin outline saves PCB space in the IP67 enclosure, and its 175 C junction temperature rating handles rooftop thermal extremes. The automotive-grade qualification gives designers confidence in long-term outdoor reliability.
Recommended
Battery Disconnect Switch (48V Automotive)
In 48 V battery disconnect switches for mild-hybrid and BEV safety systems, the IAUS300N08S5N011TATMA1 carries 200-300 A continuous battery current with very low loss thanks to its 1.1 mOhm R_DS(on). The 80 V V_DS rating covers the 48 V boardnet with full transient margin, and the 300 A continuous rating handles peak auxiliary loads (e.g., electric turbo, air conditioning). The OptiMOS-5 silicon's fast body-diode recovery reduces reverse-current stress during hot-plug events. The PG-HDSOP-16-2 package's large drain pad supports the high continuous current, and the automotive-grade qualification meets ISO 26262 functional-safety requirements for crash-relevant disconnect systems.
Recommended
Recommended Products Summary
Engineering reference data for IAUS300N08S5N011TATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUT300N08S5N011 | ISC151N08NM6ATMA1 | ISC037N12NM6ATMA1 | ISZ230N10NM6ATMA1 | IQE220N15NM5ATMA1 | BSC050N04LSGATMA1 |
|---|---|---|---|---|---|---|---|
| Package | PG-HDSOP-16-2 | PG-HDSOP-16-2 - same | PG-HDSOP-16-2 - same | PG-HDSOP-16-2 - same | PG-HDSOP-16-2 - same | PG-HDSOP-16-2 - same | PG-HDSOP-16-2 - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage (V_DS) | 80 V | 80 V | 80 V | 120 V | 100 V | 150 V | 40 V |
| Continuous Drain Current (Tj) | 300 A | 300 A | 300 A (class) | 300 A (class) | 300 A (class) | 300 A (class) | 300 A (class) |
| R_DS(on) Max @ V_GS=10V | 1.1 mOhm | 1.1 mOhm | ~1.5 mOhm | ~3.7 mOhm | ~2.3 mOhm | ~22 mOhm | ~0.5 mOhm |
| Technology | OptiMOS-5 | OptiMOS-5 | OptiMOS-5 | OptiMOS-5 | OptiMOS-5 | OptiMOS-5 | OptiMOS-5 |
Key Differentiators
- Optimized 80V V_DS class for 48V automotive boardnet (vs ISC037N12NM6ATMA1)
- Ultra-low 1.1 mOhm R_DS(on) at 10V V_GS (vs IQE220N15NM5ATMA1)
- Dual-side cooling PG-HDSOP-16-2 package (vs BSC050N04LSGATMA1)
Design Notes
Estimated: at V_DS=24V, I_D=200A continuous, and R_DS(on)=1.1 mOhm, conduction loss is approximately 44W. With the PG-HDSOP-16-2 package thermal resistance of ~0.4 C/W (junction-to-case) and 175 C max junction temperature, the heatsink must keep case temperature below 157 C. Use 4 oz copper on top and bottom PCB layers, 9 thermal vias under the exposed pad, and consider an aluminum PCB or bonded heatsink for continuous full-load operation.
Connect the Kelvin-source pin (pin 4) directly to the gate-driver return trace, NOT to the main power-source path. This prevents the source inductance (typically 1-5 nH on PCB) from adding to V_GS during switching, which would otherwise cause gate-oscillation, shoot-through, and device failure. Keep the gate-driver loop area below 0.5 cm^2 by routing gate and return traces on adjacent layers with no breaks. Use 1 oz copper minimum for the gate trace and 2 oz for the power loop.
Do not exceed the maximum V_DS of 80 V even for transients - add a 100 V TVS diode (e.g., Littelfuse SMAJ100A) across drain-source for inductive-load applications. Ensure the gate-driver can sink 2 A peak to discharge the 231 nC Q_G in <100 ns - insufficient sink current causes Miller-effect-induced shoot-through in half-bridge topologies. Per the Infineon OptiMOS-5 datasheet, do not operate V_GS above 20 V (absolute max) or below -20 V; use a bipolar gate-drive supply (e.g., +12V/-3V) to minimize turn-off loss.
The PG-HDSOP-16-2 package requires a 1.0 mm minimum standoff for cleaning under the device. Use a 0.1 mm-thick thermal pad (e.g., Henkel Bergquist gap-pad) if a heatsink is mounted. Per IPC-2221, the drain pad should be at least 100 mm^2 of copper on each PCB layer, with thermal vias in a 1.0 mm pitch array. Route high-current traces on both top and bottom layers with multiple vias to share current and reduce DC resistance.
Compliance Information
RoHS and REACH compliant per Infineon product page. AEC-Q100 qualified for automotive applications. Lead-free (Pb-free) reflow-compatible per JEDEC J-STD-020. Halogen-free per IEC 61249-2-21. Conflict-minerals compliant per Infineon supplier declarations.
