IAUT165N08S5N029ATMA2 vs IAUCN08S7L033ATMA1 Comparison
Detailed side-by-side comparison of IAUT165N08S5N029ATMA2 by Infineon and IAUCN08S7L033ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUT165N08S5N029ATMA2
IAUT165N08S5N029ATMA2 - 80V 165A 2.9mΞ© N-Ch OptiMOS 5 | Infineon
IAUT165N08S5N029ATMA2 β ActiveInfineon
IAUCN08S7L033ATMA1
IAUCN08S7L033ATMA1 - 80V 3.3mΞ© OptiMOS 7 N-MOSFET | Infineon
IAUCN08S7L033ATMA1 β ActiveSpecification Comparison
| Parameter | IAUT165N08S5N029ATMA2 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.30 | $0.86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IAUT165N08S5N029ATMA2 | β |
| Product Family | OptiMOSβ’ 5 | β |
| Transistor Type | N-Channel Enhancement Mode MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | 80 V | β |
| Continuous Drain Current (I<sub>D</sub>, Tc) | 165 A | β |
| Pulsed Drain Current (I<sub>DM</sub>) | 660 A | β |
| On-Resistance (R<sub>DS(on)</sub>) | 2.9 mΞ© (typical) | β |
| Power Dissipation (P<sub>D</sub>, Tc) | 167 W | β |
| Avalanche Energy (E<sub>AS</sub>) | 225 mJ | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C (T<sub>j</sub>) | -55Β°C to +175Β°C (TJ) |
| Package / Case | PG-HSOF-8-1 (8+Tab, Surface Mount) | β |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Rating | MSL1 (up to 260 Β°C peak reflow) | β |
| Automotive Qualification | AEC-Q101 Qualified | β |
| RoHS Compliance | Green Product (RoHS compliant) | β |
| Avalanche Tested | 100% Avalanche Tested | β |
| Series | β | Automotive OptiMOS 7 |
| Drain-Source Voltage (VDS) | β | 80 V |
| Maximum On-Resistance (RDS(on)) at VGS=10V | β | 3.3 mΞ© |
| Continuous Drain Current (ID) at Tj | β | 130 A |
| Continuous Drain Current (ID) at Tc=25Β°C | β | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25Β°C | β | 118 W |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical] |
| Gate-Source Voltage (VGS) max | β | Β±20 V (typical Infineon OptiMOS 7 limit) |
| Package | β | PG-TDSON-8-34 (SSO8, 5x6 mmΒ²) |
| Qualification | β | Automotive Grade (per Infineon datasheet header) |
| Technology | β | OptiMOS 7 trench MOSFET |
| RoHS Status | β | Compliant |
| MSL Level | β | 1 (per JEDEC J-STD-020, typical for this package) |