IAUT165N08S5N029ATMA2 vs IAUCN08S7L033ATMA1 Сравнение
Подробное сравнение бок о бок IAUT165N08S5N029ATMA2 от Infineon и IAUCN08S7L033ATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IAUT165N08S5N029ATMA2 - 80V 165A 2.9mΩ N-Ch OptiMOS 5 | Infineon
IAUT165N08S5N029ATMA2 ✓ АктивенСравнение характеристик
| Параметр | IAUT165N08S5N029ATMA2 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $2,30 | $0,86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IAUT165N08S5N029ATMA2 | — |
| Product Family | OptiMOS™ 5 | — |
| Тип транзистора | N-Channel Enhancement Mode MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | 80 V | — |
| Continuous Drain Current (I<sub>D</sub>, Tc) | 165 A | — |
| Pulsed Drain Current (I<sub>DM</sub>) | 660 A | — |
| On-Resistance (R<sub>DS(on)</sub>) | 2.9 mΩ (typical) | — |
| Power Dissipation (P<sub>D</sub>, Tc) | 167 W | — |
| Avalanche Energy (E<sub>AS</sub>) | 225 mJ | — |
| Диапазон рабочих температур | -55 °C to +175 °C (T<sub>j</sub>) | -55°C to +175°C (TJ) |
| Корпус / Типоразмер | PG-HSOF-8-1 (8+Tab, Surface Mount) | — |
| Тип монтажа | Surface Mount | Surface Mount |
| MSL Rating | MSL1 (up to 260 °C peak reflow) | — |
| Automotive Qualification | AEC-Q101 Qualified | — |
| RoHS Compliance | Green Product (RoHS compliant) | — |
| Avalanche Tested | 100% Avalanche Tested | — |
| Series | — | Automotive OptiMOS 7 |
| Drain-Source Voltage (VDS) | — | 80 V |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tj | — | 130 A |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25°C | — | 118 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate-Source Voltage (VGS) max | — | ±20 V (typical Infineon OptiMOS 7 limit) |
| Корпус | — | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| Qualification | — | Automotive Grade (per Infineon datasheet header) |
| Technology | — | OptiMOS 7 trench MOSFET |
| Статус RoHS | — | Compliant |
| Уровень MSL | — | 1 (per JEDEC J-STD-020, typical for this package) |