IAUTN04S7N003ATMA1 vs IAUCN04S7N037GATMA1 Comparison
Detailed side-by-side comparison of IAUTN04S7N003ATMA1 by Infineon and IAUCN04S7N037GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUTN04S7N003ATMA1
IAUTN04S7N003ATMA1 - 40V 350A OptiMOS 7 N-Channel MOSFET | Infineon
IAUTN04S7N003ATMA1 β ActiveInfineon
IAUCN04S7N037GATMA1
IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon
IAUCN04S7N037GATMA1 β ActiveSpecification Comparison
| Parameter | IAUTN04S7N003ATMA1 | IAUCN04S7N037GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.42 | $0.89 |
| Technology | OptiMOS 7 N-Channel Trench MOSFET | Trench MOSFET, N-Channel |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at Tj | 350 A | 91 A |
| Power Dissipation (PD) at Tc=25Β°C | 357 W | β |
| RDS(on) max at VGS=10V | 0.24 mOhm (typical) | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Avalanche Single-Pulse Current | [DATA_NEEDED: IAS] | β |
| Body Diode Continuous Forward Current | 350 A (Tj = 25 Β°C) | β |
| Body Diode Pulse Current | 3510 A (tp = 100 Β΅s, Tj = 25 Β°C) | β |
| Body Diode Forward Voltage (VSD) | 0.95 V max (0.8 V typ) at IS = 100 A | β |
| Reverse Recovery Time (trr) | 83 ns typical / 125 ns max | β |
| Reverse Recovery Charge (Qrr) | 126 nC typical / 252 nC max | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C (Tj) | [DATA_NEEDED: junction/ambient temperature limits] |
| Package | PG-HSOF-8-9 (TOLL, 10x12 mm, surface mount) | SSO4G 5x6 mmΒ² (PG-THSOG-4-1) |
| Mounting Type | Surface Mount | Surface Mount (IMS substrate attach compatible) |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 7 |
| On-State Resistance RDS(on) typical | β | 3.65 mΞ© at VGS = 10 V |
| Power Dissipation (PD) at Tc | β | 57 W |
| Channel Type | β | N-Channel |
| Operating Mode | β | Enhancement |
| Gate Charge (Qg) typical | β | [DATA_NEEDED: total gate charge] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical/range] |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: Ciss] |