IAUTN04S7N003ATMA1 vs IAUCN04S7N037GATMA1 مقایسه
مقایسه دقیق کنار به کنار IAUTN04S7N003ATMA1 توسط Infineon و IAUCN04S7N037GATMA1 توسط Infineon. مشخصات کلیدی، پارامترهای الکتریکی، بسته‌بندی، وضعیت چرخه عمر، قیمت‌گذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.
Infineon
IAUTN04S7N003ATMA1 - 40V 350A OptiMOS 7 N-Channel MOSFET | Infineon
IAUTN04S7N003ATMA1 ✓ فعالمقایسه مشخصات
| پارامتر | IAUTN04S7N003ATMA1 | IAUCN04S7N037GATMA1 |
|---|---|---|
| برند | Infineon | Infineon |
| دسته‌بندی | MOSFETs | MOSFETs |
| وضعیت چرخه عمر | فعال | فعال |
| Technology | OptiMOS 7 N-Channel Trench MOSFET | Trench MOSFET, N-Channel |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at Tj | 350 A | 91 A |
| Power Dissipation (PD) at Tc=25°C | 357 W | — |
| RDS(on) max at VGS=10V | 0.24 mOhm (typical) | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Avalanche Single-Pulse Current | [DATA_NEEDED: IAS] | — |
| Body Diode Continuous Forward Current | 350 A (Tj = 25 °C) | — |
| Body Diode Pulse Current | 3510 A (tp = 100 µs, Tj = 25 °C) | — |
| Body Diode Forward Voltage (VSD) | 0.95 V max (0.8 V typ) at IS = 100 A | — |
| Reverse Recovery Time (trr) | 83 ns typical / 125 ns max | — |
| Reverse Recovery Charge (Qrr) | 126 nC typical / 252 nC max | — |
| محدوده دمای کاری | -55 °C to +175 °C (Tj) | [DATA_NEEDED: junction/ambient temperature limits] |
| بسته‌بندی | PG-HSOF-8-9 (TOLL, 10x12 mm, surface mount) | SSO4G 5x6 mm² (PG-THSOG-4-1) |
| نوع نصب | Surface Mount | Surface Mount (IMS substrate attach compatible) |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| وضعیت RoHS | Compliant | Compliant |
| سطح MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 7 |
| On-State Resistance RDS(on) typical | — | 3.65 mΩ at VGS = 10 V |
| Power Dissipation (PD) at Tc | — | 57 W |
| Channel Type | — | N-Channel |
| Operating Mode | — | Enhancement |
| Gate Charge (Qg) typical | — | [DATA_NEEDED: total gate charge] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/range] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |