IAUTN04S7N004ATMA1 vs IAUCN04S7L042GATMA1 Comparison
Detailed side-by-side comparison of IAUTN04S7N004ATMA1 by Infineon and IAUCN04S7L042GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUTN04S7N004ATMA1
IAUTN04S7N004ATMA1 - 40V 0.38mΞ© 350A OptiMOS 7 | Infineon
IAUTN04S7N004ATMA1 β ActiveInfineon
IAUCN04S7L042GATMA1
IAUCN04S7L042GATMA1 - 40V 77A OptiMOS 7 N-MOSFET, PG-THSOG-4 | Infineon
IAUCN04S7L042GATMA1 β ActiveSpecification Comparison
| Parameter | IAUTN04S7N004ATMA1 | IAUCN04S7L042GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.05 | $0.86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | OptiMOS 7 40V |
| Technology | N-Channel Trench MOSFET | Trench N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at TC=25C | [DATA_NEEDED: ID at TC=25C] | β |
| Continuous Drain Current (ID) at Tj | 350 A | β |
| On-Resistance RDS(on) max | 0.38 mΞ© | β |
| Power Dissipation (PD) at TC | 255 W | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | β |
| Gate Charge (Qg) | [DATA_NEEDED: Qg total] | β |
| Operating Temperature Range | -55C to +175C | -55C to +175C (Tj) |
| Package | PG-HSOF-8-8 (TOLL 10x12) | PG-THSOG-4 (SSO4G 5x6) leaded surface mount |
| Mounting Type | Surface Mount | Surface Mount (IMS substrate / FR4 with thermal vias) |
| Qualification | AEC-Q101 Automotive | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Polarity | N-Channel | β |
| Continuous Drain Current (ID, Tj) | β | 77 A |
| Maximum Power Dissipation (PD, Tc) | β | 50 W |
| Polarity / Channel Type | β | N-Channel enhancement mode |
| Automotive Qualified | β | Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) |
| MSL Level | β | 1 |
| Packing | β | Tape & Reel (per -ATMA1 suffix) |
| Target Substrate | β | IMS substrate and legacy FR4 designs |
| On-State Resistance RDS(on) | β | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge Qg | β | [DATA_NEEDED: Qg @ VGS=10V] |