IAUTN04S7N004ATMA1 vs IAUCN04S7L042GATMA1 对比

详细并排对比 IAUTN04S7N004ATMA1 出自 Infineon 和 IAUCN04S7L042GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUTN04S7N004ATMA1 IAUTN04S7N004ATMA1 - 40V 0.38mΩ 350A OptiMOS 7 | Infineon

IAUTN04S7N004ATMA1 - 40V 0.38mΩ 350A OptiMOS 7 | Infineon

IAUTN04S7N004ATMA1 ✓ 量产中

规格对比

参数 IAUTN04S7N004ATMA1 IAUCN04S7L042GATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $6.05 $0.86
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 OptiMOS 7 40V
Technology N-Channel Trench MOSFET Trench N-Channel MOSFET
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) at TC=25C [DATA_NEEDED: ID at TC=25C] —
Continuous Drain Current (ID) at Tj 350 A —
On-Resistance RDS(on) max 0.38 mΩ —
Power Dissipation (PD) at TC 255 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Gate Charge (Qg) [DATA_NEEDED: Qg total] —
工作温度范围 -55C to +175C -55C to +175C (Tj)
封装 PG-HSOF-8-8 (TOLL 10x12) PG-THSOG-4 (SSO4G 5x6) leaded surface mount
安装类型 Surface Mount Surface Mount (IMS substrate / FR4 with thermal vias)
Qualification AEC-Q101 Automotive —
RoHS 状态 Compliant Compliant
Lead-Free Yes —
Polarity N-Channel —
Continuous Drain Current (ID, Tj) — 77 A
Maximum Power Dissipation (PD, Tc) — 50 W
Polarity / Channel Type — N-Channel enhancement mode
Automotive Qualified — Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts)
MSL 等级 — 1
Packing — Tape & Reel (per -ATMA1 suffix)
Target Substrate — IMS substrate and legacy FR4 designs
On-State Resistance RDS(on) — [DATA_NEEDED: RDS(on) max @ VGS=10V]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge Qg — [DATA_NEEDED: Qg @ VGS=10V]

数据手册与资源

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