IAUTN04S7N004ATMA1 vs IAUCN04S7L042GATMA1 Vergleich
Detaillierter Direktvergleich von IAUTN04S7N004ATMA1 von Infineon und IAUCN04S7L042GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUCN04S7L042GATMA1 - 40V 77A OptiMOS 7 N-MOSFET, PG-THSOG-4 | Infineon
IAUCN04S7L042GATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUTN04S7N004ATMA1 | IAUCN04S7L042GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $6,05 | $0,86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | OptiMOS 7 40V |
| Technology | N-Channel Trench MOSFET | Trench N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at TC=25C | [DATA_NEEDED: ID at TC=25C] | — |
| Continuous Drain Current (ID) at Tj | 350 A | — |
| On-Resistance RDS(on) max | 0.38 mΩ | — |
| Power Dissipation (PD) at TC | 255 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Betriebstemperaturbereich | -55C to +175C | -55C to +175C (Tj) |
| Gehäuse | PG-HSOF-8-8 (TOLL 10x12) | PG-THSOG-4 (SSO4G 5x6) leaded surface mount |
| Montageart | Surface Mount | Surface Mount (IMS substrate / FR4 with thermal vias) |
| Qualification | AEC-Q101 Automotive | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Polarity | N-Channel | — |
| Continuous Drain Current (ID, Tj) | — | 77 A |
| Maximum Power Dissipation (PD, Tc) | — | 50 W |
| Polarity / Channel Type | — | N-Channel enhancement mode |
| Automotive Qualified | — | Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) |
| MSL-Level | — | 1 |
| Packing | — | Tape & Reel (per -ATMA1 suffix) |
| Target Substrate | — | IMS substrate and legacy FR4 designs |
| On-State Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg @ VGS=10V] |