IAUTN12S5N017ATMA1 vs IAUC120N04S6N009ATMA1 Comparison
Detailed side-by-side comparison of IAUTN12S5N017ATMA1 by Infineon and IAUC120N04S6N009ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUTN12S5N017ATMA1
IAUTN12S5N017ATMA1 - 120V 1.7mΞ© N-Channel OptiMOS 5 MOSFET | Infineon
IAUTN12S5N017ATMA1 β ActiveInfineon
IAUC120N04S6N009ATMA1
IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΞ© OptiMOS 6 MOSFET | Infineon
IAUC120N04S6N009ATMA1 β ActiveSpecification Comparison
| Parameter | IAUTN12S5N017ATMA1 | IAUC120N04S6N009ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.83 | $1.60 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOSβ’ 5 | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (V<sub>DS</sub>) | 120 V | β |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25Β°C) | 314 A | β |
| On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) | 1.7 mΞ© | β |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | 2.5 V typical (range per datasheet) | β |
| Gate Charge (Q<sub>g</sub>) | per datasheet curve (typ. ~150 nC class) | β |
| Maximum Junction Temperature | 175 Β°C | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C (junction) | β |
| Package | PG-HSOF-8-1 (HSOF-8, surface mount) | PG-TDSON-8-33 (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Mounting Position | Kelvin source pin (pin 2) for high-frequency layouts | β |
| Technology | OptiMOS 5 trench MOSFET | β |
| Qualification | Automotive grade (per Infineon part page, AEC-Q101 expected for the family) | β |
| RoHS Status | Compliant (per distributor listings) | β |
| MSL Level | 1 (per JEDEC J-STD-020, by package) | 1 |
| Part Family | β | OptiMOS 6 40V |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (V_DSS) | β | 40 V |
| Continuous Drain Current (I_D, Tc) | β | 120 A |
| Pulsed Drain Current | β | [DATA_NEEDED: pulsed I_D value] |
| R_DS(on) max @ V_GS=10V | β | 0.9 mΞ© |
| Gate Threshold Voltage V_GS(th) typ | β | [DATA_NEEDED: V_GS(th) typical value] |
| Total Gate Charge Q_g typ | β | [DATA_NEEDED: Q_g typical] |
| Power Dissipation (Tc) | β | 150 W |
| Thermal Resistance R_thJC max | β | 1.0 K/W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Automotive Qualification | β | AEC-Q101 |
| RoHS | β | Compliant |
| Lead-Free / Halogen-Free | β | Yes (per Infineon product page) |