IAUTN12S5N017ATMA1 vs IAUC120N04S6N009ATMA1 비교

다음의 상세 나란히 비교: IAUTN12S5N017ATMA1 제조: Infineon 및 IAUC120N04S6N009ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IAUTN12S5N017ATMA1 IAUC120N04S6N009ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $4.83 $1.60
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS™ 5 —
FET Type N-Channel —
Drain-Source Voltage (V<sub>DS</sub>) 120 V —
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) 314 A —
On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) 1.7 mΩ —
Gate Threshold Voltage (V<sub>GS(th)</sub>) 2.5 V typical (range per datasheet) —
Gate Charge (Q<sub>g</sub>) per datasheet curve (typ. ~150 nC class) —
Maximum Junction Temperature 175 °C —
동작 온도 범위 -55 °C to +175 °C (junction) —
패키지 PG-HSOF-8-1 (HSOF-8, surface mount) PG-TDSON-8-33 (5x6 mm)
실장 유형 Surface Mount Surface Mount
Mounting Position Kelvin source pin (pin 2) for high-frequency layouts —
Technology OptiMOS 5 trench MOSFET —
Qualification Automotive grade (per Infineon part page, AEC-Q101 expected for the family) —
RoHS 상태 Compliant (per distributor listings) —
MSL 레벨 1 (per JEDEC J-STD-020, by package) 1
Part Family — OptiMOS 6 40V
Polarity / Channel Type — N-Channel
Drain-Source Voltage (V_DSS) — 40 V
Continuous Drain Current (I_D, Tc) — 120 A
펄스 드레인 전류 — [DATA_NEEDED: pulsed I_D value]
R_DS(on) max @ V_GS=10V — 0.9 mΩ
Gate Threshold Voltage V_GS(th) typ — [DATA_NEEDED: V_GS(th) typical value]
Total Gate Charge Q_g typ — [DATA_NEEDED: Q_g typical]
Power Dissipation (Tc) — 150 W
Thermal Resistance R_thJC max — 1.0 K/W
동작 접합 온도 — -55 °C to +175 °C
Automotive Qualification — AEC-Q101
RoHS — Compliant
Lead-Free / Halogen-Free — Yes (per Infineon product page)

데이터시트 & 자료

모든 제품 보기 BOM 생성 견적 요청