IAUTN12S5N017ATMA1 vs IAUC120N04S6N009ATMA1 Comparação
Comparação detalhada lado a lado de IAUTN12S5N017ATMA1 por Infineon e IAUC120N04S6N009ATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
IAUTN12S5N017ATMA1 - 120V 1.7mΩ N-Channel OptiMOS 5 MOSFET | Infineon
IAUTN12S5N017ATMA1 ✓ AtivoInfineon
IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΩ OptiMOS 6 MOSFET | Infineon
IAUC120N04S6N009ATMA1 ✓ AtivoComparação de especificações
| Parâmetro | IAUTN12S5N017ATMA1 | IAUC120N04S6N009ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $4,83 | $1,60 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS™ 5 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 120 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | 314 A | — |
| On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) | 1.7 mΩ | — |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | 2.5 V typical (range per datasheet) | — |
| Gate Charge (Q<sub>g</sub>) | per datasheet curve (typ. ~150 nC class) | — |
| Maximum Junction Temperature | 175 °C | — |
| Faixa de temperatura de operação | -55 °C to +175 °C (junction) | — |
| Encapsulamento | PG-HSOF-8-1 (HSOF-8, surface mount) | PG-TDSON-8-33 (5x6 mm) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Mounting Position | Kelvin source pin (pin 2) for high-frequency layouts | — |
| Technology | OptiMOS 5 trench MOSFET | — |
| Qualification | Automotive grade (per Infineon part page, AEC-Q101 expected for the family) | — |
| Status RoHS | Compliant (per distributor listings) | — |
| Nível MSL | 1 (per JEDEC J-STD-020, by package) | 1 |
| Part Family | — | OptiMOS 6 40V |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DSS) | — | 40 V |
| Continuous Drain Current (I_D, Tc) | — | 120 A |
| Corrente de dreno pulsada | — | [DATA_NEEDED: pulsed I_D value] |
| R_DS(on) max @ V_GS=10V | — | 0.9 mΩ |
| Gate Threshold Voltage V_GS(th) typ | — | [DATA_NEEDED: V_GS(th) typical value] |
| Total Gate Charge Q_g typ | — | [DATA_NEEDED: Q_g typical] |
| Power Dissipation (Tc) | — | 150 W |
| Thermal Resistance R_thJC max | — | 1.0 K/W |
| Temperatura de junção de operação | — | -55 °C to +175 °C |
| Automotive Qualification | — | AEC-Q101 |
| RoHS | — | Compliant |
| Lead-Free / Halogen-Free | — | Yes (per Infineon product page) |