IAUZ30N10S5L240ATMA1 vs IAUCN10S7L290TATMA1 Comparison
Detailed side-by-side comparison of IAUZ30N10S5L240ATMA1 by Infineon and IAUCN10S7L290TATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUZ30N10S5L240ATMA1 - 100V 30A 24mΞ© OptiMOS 5 N-MOSFET | Infineon
IAUZ30N10S5L240ATMA1 β ActiveInfineon
IAUCN10S7L290TATMA1
IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7L290TATMA1 β ActiveSpecification Comparison
| Parameter | IAUZ30N10S5L240ATMA1 | IAUCN10S7L290TATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.86 | $0.36 |
| FET Type | N-Channel | β |
| Technology | OptiMOS 5 (trench) | β |
| Drain-Source Voltage (V_DS) | 100 V | β |
| Continuous Drain Current (I_D, Tc) | 30 A | β |
| R_DS(on) max at V_GS=10V | 24 mΞ© | β |
| Gate-Source Voltage (V_GS) max | Β±20 V | β |
| Gate Charge (Q_g) typ | 14 nC at V_GS=10V | β |
| Input Capacitance (C_iss) typ | 832 pF at V_DS=50V | β |
| Power Dissipation (P_D, Tc) | 45.5 W | β |
| Package | PG-TSDSON-8-32 (8-PowerTDFN, exposed drain pad) | PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55Β°C to +175Β°C (junction, automotive grade) | β |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q100 qualified |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) value] | β |
| RoHS Status | Compliant | β |
| Lead-Free / Halogen-Free | Yes / [DATA_NEEDED: halogen-free status] | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOSβ’ 7 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 100 V |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at TC=25Β°C | β | 27 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM pulse rating] |
| On-Resistance RDS(on) max @ VGS=10V | β | 28.6 mΞ© |
| On-Resistance RDS(on) max @ VGS=4.5V | β | [DATA_NEEDED: RDS(on) at 4.5 V] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) at TC=25Β°C | β | 45 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| MSL Level | β | 1 (per JEDEC J-STD-020) |
| RoHS Compliance | β | Compliant |
| Lead-Free | β | Yes |
| Avalanche Rated | β | Yes |
| ESD Protection | β | HBM Class 1C (per Infineon datasheet) |