IAUZ30N10S5L240ATMA1 vs IAUCN10S7L290TATMA1 비교

다음의 상세 나란히 비교: IAUZ30N10S5L240ATMA1 제조: Infineon 및 IAUCN10S7L290TATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IAUCN10S7L290TATMA1 IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon

IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon

IAUCN10S7L290TATMA1 ✓ 활성

사양 비교

파라미터 IAUZ30N10S5L240ATMA1 IAUCN10S7L290TATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.86 $0.36
FET Type N-Channel —
Technology OptiMOS 5 (trench) —
Drain-Source Voltage (V_DS) 100 V —
Continuous Drain Current (I_D, Tc) 30 A —
R_DS(on) max at V_GS=10V 24 mΩ —
Gate-Source Voltage (V_GS) max ±20 V —
Gate Charge (Q_g) typ 14 nC at V_GS=10V —
Input Capacitance (C_iss) typ 832 pF at V_DS=50V —
Power Dissipation (P_D, Tc) 45.5 W —
패키지 PG-TSDSON-8-32 (8-PowerTDFN, exposed drain pad) PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled
실장 유형 Surface Mount Surface Mount
동작 온도 범위 -55°C to +175°C (junction, automotive grade) —
Automotive Qualification AEC-Q101 qualified AEC-Q100 qualified
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) value] —
RoHS 상태 Compliant —
Lead-Free / Halogen-Free Yes / [DATA_NEEDED: halogen-free status] —
Manufacturer — Infineon Technologies
Product Family — OptiMOS™ 7
트랜지스터 유형 — N-Channel MOSFET
Drain-Source Voltage (VDS) — 100 V
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at TC=25°C — 27 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM pulse rating]
On-Resistance RDS(on) max @ VGS=10V — 28.6 mΩ
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5 V]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Power Dissipation (PD) at TC=25°C — 45 W
동작 접합 온도 — -55 °C to +175 °C
MSL 레벨 — 1 (per JEDEC J-STD-020)
RoHS Compliance — Compliant
Lead-Free — Yes
Avalanche Rated — Yes
ESD Protection — HBM Class 1C (per Infineon datasheet)

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