IAUZ30N10S5L240ATMA1 - 100V 30A 24mΩ OptiMOS 5 N-MOSFET | Infineon
MPN: IAUZ30N10S5L240ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.38 | $138.00 |
| 500 | $1.18 | $590.00 |
| 1,000 | $1.02 | $1,020.00 |
| 5,000 | $0.86 | $4,300.00 |
Drop-in alternatives for IAUZ30N10S5L240ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IAUZ40N06S5L050ATMA1
✅ Drop-In✓ In Stock
$0.71 / Unit
View Datasheet →IAUZ30N10S5L240ATMA1
✅ Drop-In✓ In Stock
$0.86 / Unit
View Datasheet →IAUC100N08S5N043ATMA1
✅ Drop-In✓ In Stock
$1.72 / Unit
View Datasheet →BSC097N06NSATMA1
✅ Drop-In✓ In Stock
$0.38 / Unit
View Datasheet →IAUZ30N10S5L240ATMA1 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Technology | OptiMOS 5 (trench) |
| Drain-Source Voltage (V_DS) | 100 V |
| Continuous Drain Current (I_D, Tc) | 30 A |
| R_DS(on) max at V_GS=10V | 24 mΩ |
| Gate-Source Voltage (V_GS) max | ±20 V |
| Gate Charge (Q_g) typ | 14 nC at V_GS=10V |
| Input Capacitance (C_iss) typ | 832 pF at V_DS=50V |
| Power Dissipation (P_D, Tc) | 45.5 W |
| Package | PG-TSDSON-8-32 (8-PowerTDFN, exposed drain pad) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55°C to +175°C (junction, automotive grade) |
| Automotive Qualification | AEC-Q101 qualified |
| RoHS Status | Compliant |
IAUZ30N10S5L240ATMA1 Pin Configuration
| Pin 1 | G — Gate — gate-drive input (10 V typical for full enhancement) |
| Pin 2 | KS — Kelvin Source — connect to gate-driver ground return for low-loss gate drive |
| Pin 3 | S — Source — main current return path |
| Pin 4 | S — Source |
| Pin 5 | S — Source |
| Pin 6 | S — Source |
| Pin 7 | S — Source |
| Pin 8 | S — Source — bond pad adjacent to drain pad |
| Pin PAD | D — Drain — exposed metal pad, also primary thermal path |
Safe Operating Area (Tc=25°C, VGS=10V)
Typical Applications
IAUZ30N10S5L240ATMA1 is suitable for 6 applications: Automotive 12V/24V Load Switching, DC-DC Buck/Boost Converter Power Stage, Motor Drive Half-Bridge (Pumps, Fans, BLDC), Reverse-Battery Protection (RBP) and OR-ing, Hot-Swap / In-Rush Current Limiting, LED Driver Power Switch (Automotive Lighting).
Automotive 12V/24V Load Switching
The IAUZ30N10S5L240ATMA1's 100 V V<sub>DS</sub> rating and AEC-Q101 qualification make it a strong fit for high-side and low-side load switching in 12 V and 24 V automotive body-electronics modules. Its 24 mΩ R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V keeps conduction loss low enough that a 20 A continuous ECU load dissipates only ~9.6 W, manageable by the PG-TSDSON-8-32 exposed-pad footprint on 1 oz copper. The 100 V rating also provides ≥30 V margin above 24 V load-dump events per ISO 7637-2.
Recommended
DC-DC Buck/Boost Converter Power Stage
The IAUZ30N10S5L240ATMA1 is well suited to the synchronous-rectifier and control-FET positions in 12 V-to-3.3 V/5 V buck converters used in automotive ECU power trees. Its 14 nC Q<sub>g</sub> supports switching frequencies up to ~500 kHz with acceptable driver loss, and its 24 mΩ R<sub>DS(on)</sub> balances conduction and switching loss at full load. The exposed-drain pad also acts as a heatsink, eliminating an external thermal solution.
Recommended
Motor Drive Half-Bridge (Pumps, Fans, BLDC)
For automotive water pumps, oil pumps, cooling fans, and small BLDC actuators, the IAUZ30N10S5L240ATMA1 forms the low-side or high-side switch in a three-phase or half-bridge inverter. Its 30 A continuous rating covers single-digit-ampere motor windings with substantial peak surge headroom for inrush currents. The AEC-Q101 screening ensures reliability under the repetitive thermal cycling of motor-driven automotive environments from -40°C to +150°C ambient.
Recommended
Reverse-Battery Protection (RBP) and OR-ing
In automotive ECUs that require reverse-battery and load-dump protection, the IAUZ30N10S5L240ATMA1 can be placed in series with the supply rail as a self-controlled reverse-blocking element. The 100 V V<sub>DS</sub> rating and the body's intrinsic diode handle the negative transient during a reverse-battery event. At 24 mΩ, the steady-state voltage drop is minimal (≈0.5 V at 20 A) compared to a Schottky-diode solution that would dissipate excessive power.
Recommended
Hot-Swap / In-Rush Current Limiting
The IAUZ30N10S5L240ATMA1 can act as the pass element in a hot-swap controller for plug-in automotive or industrial modules. Driving the gate with a controlled current source or an RC ramp allows soft-start of large bulk capacitors, while the 30 A I<sub>D</sub> rating supports continuous operation at moderate load. The 100 V rating survives transients when the upstream rail is a 24 V industrial bus or 48 V mild-hybrid system stepped down for an auxiliary module.
Recommended
LED Driver Power Switch (Automotive Lighting)
For matrix-LED headlamps, daytime running lights, and tail-lamp current drivers, the IAUZ30N10S5L240ATMA1 can serve as the high-side PWM switch that modulates string current. The fast switching speed supported by 14 nC Q<sub>g</sub> enables PWM dimming above the audible band (>200 Hz) without efficiency penalty, and AEC-Q101 qualification ensures photometric stability over the vehicle's lifetime. The 30 A rating covers multi-string LED modules up to ~100 W total.
Recommended
Recommended Products Summary
Engineering reference data for IAUZ30N10S5L240ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUZ40N06S5L050ATMA1 | IAUC100N08S5N043ATMA1 | BSC097N06NSATMA1 |
|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TSDSON-8-32 | PG-TSDSON-8 (same family) | PG-TSDSON-8 family | PG-TSDSON-8 family |
| V_DS max | 100 V | 60 V | 80 V | 60 V |
| Continuous I_D | 30 A | 40 A | 100 A | 50 A |
| R_DS(on) max @ V_GS=10V | 24 mΩ | 5.0 mΩ | 4.3 mΩ | 9.7 mΩ |
| Q_g typ | 14 nC | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Automotive Qualified | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| P_D max (Tc) | 45.5 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Optimized figure-of-merit for 100 V/30 A automotive switching (vs IAUZ40N06S5L050ATMA1)
- Higher continuous current than smaller-package OptiMOS 5 parts (vs IAUC100N08S5N043ATMA1)
- Drop-in compatible across the Infineon IAUZ/IAUC TSDSON-8 family (vs BSC097N06NSATMA1)
Design Notes
Estimated: at continuous 30 A and R<sub>DS(on)</sub>=24 mΩ, the IAUZ30N10S5L240ATMA1 dissipates P = I² × R = 30² × 0.024 = 21.6 W. The PG-TSDSON-8-32 package has a typical θ<sub>JA</sub> in the 35–50 °C/W range when soldered to 1 oz copper of about 1 square inch; this yields a junction-temperature rise of roughly 760–1080 °C above ambient — clearly unacceptable. The exposed drain pad MUST be soldered to a copper pour of at least 1–2 square inches on inner PCB layers with thermal vias to achieve the rated 45.5 W (Tc) dissipation. Designers should always perform thermal simulation with the actual PCB stack-up before committing to layout.
Use a Kelvin-source connection (pin 2) tied directly to the gate-driver ground return, separate from the high-current source pad bond. This eliminates the source-inductance negative-feedback effect that slows switching edges and can cause false turn-on during high di/dt events. Place a 10 kΩ gate-to-source pull-down resistor on the PCB so the device stays off if the gate-driver output floats during power-up. Use wide source-trace copper and stitch the ground plane beneath the drain pad with multiple thermal vias (10+ vias, 0.3 mm drill) for low thermal resistance.
Common pitfalls with the IAUZ30N10S5L240ATMA1: (1) driving the gate from a non-automotive-grade gate driver with insufficient V<sub>GS</sub> headroom — Infineon specifies V<sub>GS</sub>=±20 V absolute maximum; (2) omitting TVS protection across drain-source for load-dump events even though 100 V V<sub>DS</sub> gives margin — inductive transients can exceed the rating during relay/coil turn-off; (3) assuming 5 V V<sub>GS</sub> drive is sufficient — OptiMOS 5 is optimized for 10 V gate drive, and 5 V drive can nearly double R<sub>DS(on)</sub>; (4) using the same gate-drive resistor value as a smaller FET — at 14 nC Q<sub>g</sub>, the gate-drive loop must be tuned for 30 A switching transients.
Compliance Information
AEC-Q101 qualified (automotive discrete semiconductor standard, distinct from AEC-Q100 IC standard). RoHS and REACH compliant per Infineon product page. Conflict-minerals declaration available on Infineon.com.
