IAUZN04S7L025ATMA1 vs IAUCN04S7L050HATMA1 Comparison
Detailed side-by-side comparison of IAUZN04S7L025ATMA1 by Infineon and IAUCN04S7L050HATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUZN04S7L025ATMA1 - 40V 117A 2.56mΩ OptiMOS 7 MOSFET | Infineon
IAUZN04S7L025ATMA1 ✓ ActiveInfineon
IAUCN04S7L050HATMA1 - 40V Dual N-Ch OptiMOS 7, 5.04mΩ | Infineon
IAUCN04S7L050HATMA1 ✓ ActiveSpecification Comparison
| Parameter | IAUZN04S7L025ATMA1 | IAUCN04S7L050HATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-7 | — |
| Technology | N-Channel Trench MOSFET | Trench MOSFET, OptiMOS™ 7 40V |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS absolute maximum] | — |
| Continuous Drain Current (ID) at TC=25C | 117 A | — |
| Continuous Drain Current (ID) at TA | 60 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM value] | [DATA_NEEDED: pulsed drain current] |
| RDS(on) Max at VGS=10V | 2.56 mΩ | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at TC=25C | 65 W | — |
| Operating Junction Temperature | -55C to +175C | -55 °C to +175 °C |
| Package | PG-TSDSON-8-44 (S3O8) | PG-TDSON-8-57 (SuperSO8 half-bridge) |
| Mounting Type | Surface Mount | Surface Mount |
| AEC-Q100 Qualification | Qualified (automotive grade) | — |
| RoHS Compliance | Compliant | — |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Typical Applications | Synchronous rectification, hot-swap, OR-ing, motor drive | — |
| Series | — | OptiMOS™ 7 |
| Configuration | — | Dual N-Channel (Dual Drain, Half-Bridge) |
| Continuous Drain Current (ID), Tc=25°C | — | 65 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 5.04 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Power Dissipation (PD) @ Tc=25°C | — | 40 W |
| RoHS Status | — | Compliant |
| Automotive Qualification | — | AEC-Q101 (family-level, automotive grade) |