IAUZN04S7L025ATMA1 vs IAUCN04S7L050HATMA1 비교
다음의 상세 나란히 비교: IAUZN04S7L025ATMA1 제조: Infineon 및 IAUCN04S7L050HATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IAUZN04S7L025ATMA1 | IAUCN04S7L050HATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.89 | $0.83 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-7 | — |
| Technology | N-Channel Trench MOSFET | Trench MOSFET, OptiMOS™ 7 40V |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS absolute maximum] | — |
| Continuous Drain Current (ID) at TC=25C | 117 A | — |
| Continuous Drain Current (ID) at TA | 60 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM value] | [DATA_NEEDED: pulsed drain current] |
| RDS(on) Max at VGS=10V | 2.56 mΩ | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at TC=25C | 65 W | — |
| 동작 접합 온도 | -55C to +175C | -55 °C to +175 °C |
| 패키지 | PG-TSDSON-8-44 (S3O8) | PG-TDSON-8-57 (SuperSO8 half-bridge) |
| 실장 유형 | Surface Mount | Surface Mount |
| AEC-Q100 Qualification | Qualified (automotive grade) | — |
| RoHS Compliance | Compliant | — |
| MSL 레벨 | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Typical Applications | Synchronous rectification, hot-swap, OR-ing, motor drive | — |
| Series | — | OptiMOS™ 7 |
| Configuration | — | Dual N-Channel (Dual Drain, Half-Bridge) |
| Continuous Drain Current (ID), Tc=25°C | — | 65 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 5.04 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Power Dissipation (PD) @ Tc=25°C | — | 40 W |
| RoHS 상태 | — | Compliant |
| Automotive Qualification | — | AEC-Q101 (family-level, automotive grade) |