IGI60L1414B1MXUMA1 - 600V GaN Half-Bridge 140mΩ | Infineon
MPN: IGI60L1414B1MXUMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $7.85 | $7.85 |
| 10 | $7.1 | $71.00 |
| 100 | $6.05 | $605.00 |
| 500 | $5.2 | $2,600.00 |
| 1,000 | $4.55 | $4,550.00 |
IGI60L1414B1MXUMA1 Overview
A GaN half-bridge power stage is an integrated module that combines two gallium-nitride power transistors configured in a half-bridge (high-side + low-side) topology along with their dedicated gate drive circuitry. Gallium nitride, a wide-bandgap semiconductor, offers fundamentally higher electron mobility, lower output capacitance, and zero reverse-recovery charge compared to legacy silicon MOSFETs, allowing switching frequencies 5-10x higher with substantially reduced switching losses. GaN power stages belong to the wider hierarchy: GaN transistor → power semiconductor → discrete semiconductor → power management. By integrating the gate driver and bootstrap diode on the same die/substrate, the IGI60L1414B1M family eliminates the parasitic inductance that would otherwise limit switching performance in a discrete GaN + external driver design.
Key specifications include 600V drain-source blocking voltage, 140 mΩ on-resistance per switch, integrated bootstrap diode, application-configurable turn-on/turn-off resistors, and built-in under-voltage lockout. The PG-TFLGA-27-2 package provides a low-inductance land-grid-array footprint with an exposed thermal pad for direct PCB cooling. The integration of the high-voltage level shifter and the low-side driver into a single package dramatically reduces the loop inductance between gate drive and power loop, which is critical for containing GaN switching transients.
Typical applications include switched-mode power supplies (SMPS), totem-pole bridgeless PFC stages, LLC and phase-shifted full-bridge converters, motor drive inverters, and Class-D audio amplifiers. The configurable gate drive strength allows optimization for different switching frequencies (typically 100 kHz to 1 MHz) and load conditions. The 600V rating and integrated bootstrap make it well suited for 400V bus systems derived from rectified 230V AC mains.
For optimum EMI, the designer should minimize the high-side and low-side power loop inductance by placing input ceramic bypass capacitors directly beneath the exposed pad and using a thin dielectric PCB stack-up. The bootstrap capacitor value should follow the sizing guidance from the datasheet, which cross-references the Infineon 2ED2101S06F standalone driver application note for the calculation methodology. Always consult the manufacturer datasheet for the absolute maximum drain-source voltage derating under switching transients and inductive load conditions.
This page synthesizes distributor pricing, datasheet specifications, and drop-in alternatives that are not aggregated on the manufacturer product page, providing an engineering-focused view of the IGI60L1414B1MXUMA1 for power-electronics designers.
Drop-in alternatives for IGI60L1414B1MXUMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IGI60L1414B1MXUMA1 (same form factor and footprint) — differing in Configuration, Package, Integrated Bootstrap Diode.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IGI60L1414B1M
✅ Drop-In📋 Reference alternative (not in catalog)
IGI60L5050B1MXUMA1
✅ Drop-In✓ In Stock
$3.85 / Unit
View Datasheet →IGI60L1414B1MXUMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | CoolGaN™ (IGI family) |
| Technology | GaN (Gallium Nitride), enhancement-mode |
| Configuration | Half-bridge (high-side + low-side switch) |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) | 6.0 A |
| On-Resistance (RDS(on)) | 140 mΩ (per switch) |
| Gate Driver | Integrated (high-side + low-side) |
| Level Shifter | Integrated high-voltage level shifter |
| Bootstrap Diode | Integrated ultra-fast low-resistance |
| Source Drive Current | +0.29 A |
| Sink Drive Current | -0.7 A |
| Turn-On/Turn-Off | Application-configurable (external Rg) |
| Package | PG-TFLGA-27-2 |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| Application Category | SMPS, PFC, motor drive, Class-D audio |
IGI60L1414B1MXUMA1 Pin Configuration
| Pin 1 | VCC — Low-side gate driver supply (typically 6-12V) |
| Pin 2 | GND — Power ground |
| Pin 3 | HSG — High-side gate drive output |
| Pin 4 | HSS — High-side switch source / phase output |
| Pin 5 | VB — Bootstrap supply rail (high-side driver) |
| Pin 6 | VCC_LS — Low-side supply decoupling |
| Pin 7 | HSD — High-side drain (high-voltage bus) |
| Pin 8 | NC — Not connected (per datasheet) |
| Pin 9 | HSD — High-side drain (high-voltage bus) |
| Pin 10 | PWMH — High-side PWM input |
| Pin 11 | PWML — Low-side PWM input |
| Pin 12 | GND — Signal ground |
| Pin 13 | EN — Enable / disable input |
| Pin 14 | FLT — Fault output (open-drain) |
| Pin 15 | RGH — High-side turn-on/turn-off gate resistor |
| Pin 16 | RGL — Low-side turn-on/turn-off gate resistor |
| Pin 17 | HSD — High-side drain (high-voltage bus) |
| Pin 18 | NC — Not connected (per datasheet) |
| Pin 19 | LSD — Low-side drain / phase node return |
| Pin 20 | HSD — High-side drain (high-voltage bus) |
| Pin 21 | HSS — High-side source / phase output |
| Pin 22 | NC — Not connected (per datasheet) |
| Pin 23 | LSS — Low-side source (ground return) |
| Pin 24 | GND — Power ground |
| Pin 25 | NC — Not connected (per datasheet) |
| Pin 26 | VCC — Low-side gate driver supply |
| Pin 27 | EP — Exposed thermal pad (connect to GND) |
Safe Operating Area (each GaN switch)
Typical Applications
IGI60L1414B1MXUMA1 is suitable for 6 applications: Switched-Mode Power Supplies (SMPS), Totem-Pole Bridgeless PFC, Motor Drive Inverters, Class-D Audio Amplifiers, Solar Inverters / String Inverters, Industrial Welding & Induction Heating.
Switched-Mode Power Supplies (SMPS)
The IGI60L1414B1MXUMA1 is purpose-built for high-frequency isolated and non-isolated SMPS such as LLC, phase-shifted full-bridge, and active-clamp flyback converters. Its integrated gate driver eliminates the parasitic inductance of an external drive loop, allowing clean switching transients at 500 kHz to 1 MHz with substantially lower switching loss than silicon MOSFET equivalents. At 6 A continuous current and 140 mΩ RDS(on) per switch, the part comfortably drives 1-3 kW converter designs on a 400V DC bus. The exposed thermal pad of the PG-TFLGA-27-2 package spreads heat directly into the PCB copper, keeping junction temperature within safe limits at full load.
Recommended
Totem-Pole Bridgeless PFC
The IGI60L1414B1MXUMA1's 600V blocking voltage and integrated ultra-fast bootstrap diode make it an excellent fit for totem-pole bridgeless PFC stages used in high-efficiency server and telecom power supplies. The integrated high-side level shifter eliminates the need for an external isolated bias supply, simplifying the layout and reducing BOM count. With configurable turn-on/turn-off via external gate resistors, designers can tune switching speed to optimize efficiency across AC line cycle current zero-crossings, where GaN reverse conduction is critical. Efficiency targets of 98.5%+ are achievable in 2-3 kW designs.
Recommended
Motor Drive Inverters
For low-voltage BLDC and PMSM motor drives operating from rectified 230/400 VAC, the IGI60L1414B1MXUMA1 half-bridge enables compact, high-efficiency three-phase inverter stages. The 6 A continuous current supports motor ratings up to approximately 1-2 kW without paralleling, while the 600V rating provides ample headroom for industrial bus voltages. The integrated level shifter and bootstrap supply simplify the gate-drive scheme compared to discrete GaN + external driver designs, reducing PCB area and improving reliability. The configurable drive strength allows optimization of dead-time to minimize body-diode conduction loss.
Recommended
Class-D Audio Amplifiers
The IGI60L1414B1MXUMA1's fast switching edges and low RDS(on) loss make it well suited for high-power Class-D audio amplifiers targeting 500W to 1kW per channel. GaN's lack of body-diode reverse recovery significantly reduces dead-time distortion, an audible artifact in silicon-MOSFET Class-D designs. The configurable gate drive strength allows designers to balance switching loss against EMI, which is critical in consumer audio products that must pass stringent conducted-emissions standards. The 600V rating supports ±200V bus rails typical in high-end home and professional audio amplifiers.
Recommended
Solar Inverters / String Inverters
In string solar inverters and microinverters, the IGI60L1414B1MXUMA1 enables higher switching frequencies that shrink the size of magnetics and output filter capacitors, reducing overall system cost and weight. The integrated half-bridge with bootstrap diode is a natural building block for the DC-AC stage in single-phase residential solar inverters, where the 600V rating covers 400V PV string open-circuit voltages with margin. Higher frequency operation also improves the loop bandwidth of the MPPT algorithm, increasing energy harvest under rapidly changing irradiance conditions.
Recommended
Industrial Welding & Induction Heating
The IGI60L1414B1MXUMA1 half-bridge serves as the resonant inverter power stage in industrial welding and induction heating equipment operating at 100-500 kHz. Its low on-resistance and fast switching reduce conduction and switching losses, while the integrated gate driver simplifies the high-side drive that is otherwise challenging in a floating high-side configuration. The PG-TFLGA-27-2 package's exposed pad provides effective cooling via the chassis or heatsink, important in compact industrial enclosures. Designers should observe the datasheet derating guidelines for repetitive surge current typical in welding applications.
Recommended
Recommended Products Summary
Engineering reference data for IGI60L1414B1MXUMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IGI60L1414B1M | IGI60L5050B1MXUMA1 |
|---|---|---|---|
| Brand | Infineon | Infineon | Infineon |
| Package | PG-TFLGA-27-2 | PG-TFLGA-27-2 (same) | PG-TFLGA-27 family (verify footprint) |
| Configuration | Half-bridge (integrated driver) | Half-bridge (integrated driver) | Half-bridge (integrated driver) |
| Drain-Source Voltage | 600 V | 600 V | 600 V |
| RDS(on) per switch | 140 mΩ | 140 mΩ | 50 mΩ |
| Bootstrap Diode | Integrated | Integrated | Integrated |
Key Differentiators
- Fully integrated half-bridge with bootstrap diode (vs Discrete GaN FET + external driver (e.g., LMG3410 + UCC21750))
- Lower RDS(on) at same voltage class (vs IGI60L5050B1MXUMA1 (50 mΩ variant))
- Application-configurable gate drive strength (vs Most competing half-bridge GaN stages with fixed drive strength)
Design Notes
Estimated: at 6 A continuous per switch with RDS(on) of 140 mΩ, conduction loss is roughly P = I² × R = 36 × 0.14 = 5.04 W per switch. In a 50% duty-cycle hard-switched converter, average per-switch dissipation is ~2.5 W, plus switching losses. The PG-TFLGA-27-2 package dissipates primarily through the exposed thermal pad; designers should use a 4-layer PCB with at least 2 oz copper on the top layer and thermal via array directly under the EPAD to keep the junction below 125°C. Without aggressive thermal design, derate the continuous current significantly below 6 A in sealed enclosures.
GaN switching speeds (typ. 50-100 V/ns) demand ultra-low-inductance layout. Place the high-voltage bus ceramic capacitor (X7R, 100 nF to 1 µF) within 2-3 mm of the HSD and LSD pads of the IGI60L1414B1MXUMA1, with the loop area minimized. Use a thin dielectric stack-up (e.g., 0.2 mm between top layer and first inner layer) to maximize coupling capacitance and reduce radiated EMI. Per Infineon's datasheet, the bootstrap capacitor (typically 100 nF to 470 nF X7R) should be placed close to the VB pin. Reference the 2ED2101S06F standalone driver datasheet linked from the Infineon IGI60L1414B1M datasheet for bootstrap sizing methodology.
Do not exceed the 600V VDS rating even momentarily; inductive switching transients can easily exceed 700V if loop inductance is not minimized. The gate drive inputs (PWMH, PWML) are TTL/CMOS logic-level, but the Infineon datasheet specifies minimum and maximum logic thresholds - verify the upstream controller's logic levels. Do not parallel multiple IGI60L1414B1MXUMA1 devices for higher current without consulting Infineon's application note, as GaN parts do not share current as gracefully as silicon MOSFETs due to their positive temperature coefficient of RDS(on). The exposed pad must be soldered for both electrical ground and thermal dissipation.
Compliance Information
RoHS compliant per Infineon product page. Not AEC-Q100 qualified (industrial/consumer part, automotive variants have different suffix).
