IGI60L5050B1MXUMA1 - 600V GaN Half-Bridge with Integrated Driver | Infineon
MPN: IGI60L5050B1MXUMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $5.95 | $5.95 |
| 10 | $5.4 | $54.00 |
| 100 | $4.75 | $475.00 |
| 500 | $4.2 | $2,100.00 |
| 1,000 | $3.85 | $3,850.00 |
IGI60L5050B1MXUMA1 Overview
A GaN half-bridge power stage combines two GaN FETs and a high-side/low-side driver in a single package, eliminating parasitic inductance between switches and gate loop, enabling sub-nanosecond switching transitions and reducing dead-time losses compared to discrete silicon implementations. GaN (gallium nitride) is a wide-bandgap semiconductor with lower on-resistance per unit area, no reverse-recovery charge (Qrr ≈ 0), and higher switching slew rates than silicon MOSFETs, making GaN half-bridges the preferred power stage for totem-pole PFC, LLC converters, and high-frequency motor drives.
Key features of the IGI60L5050B1MXUMA1 include source/sink driving current of +0.29 A / -0.7 A, application-configurable turn-on and turn-off dV/dt for EMI tuning, an integrated bootstrap diode that eliminates an external high-voltage diode, and 600 V drain-source rating. The exposed top pad provides low thermal resistance to the PCB copper, allowing sustained high-current switching without an external heatsink.
Architecturally the device integrates a level shifter, low-side gate driver, high-side gate driver, two 500 mΩ GaN switches, and a bootstrap diode monolithically in CoolGaN™ technology. This integration reduces the gate-drive loop inductance to near-zero and allows switching frequencies up to several MHz, dramatically shrinking magnetics and output capacitor size in SMPS designs. The configurable gate resistors allow designers to trade switching loss against EMI margin per application.
Typical applications include totem-pole bridgeless PFC front-stages in server and telecom power supplies, LLC and HF resonant converters up to 1-2 kW, photovoltaic micro-inverters and optimizers, industrial SMPS, and high-frequency BLDC motor drives. The wide 600 V rating also makes it suitable for 400 V EV auxiliary converters and on-board chargers.
When designing with this part, observe the maximum junction temperature (typically 150 °C), keep high-side bootstrap voltage above UVLO threshold at all switching frequencies, and minimize the power-loop layout inductance to less than 5 nH for clean switching. Use the configurable gate resistor pins to tune dV/dt against EMI compliance limits.
This page synthesizes distributor pricing, drop-in alternative analysis, and practical PCB-layout design notes that go beyond the manufacturer datasheet.
Drop-in alternatives for IGI60L5050B1MXUMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IGI60L5050A1MXUMA1
✅ Drop-In📋 Reference alternative (not in catalog)
IGI60L5050B1M
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IGI60L5050B1MXUMA1 Maximum Ratings & Electrical Characteristics
| Technology | GaN (Gallium Nitride), enhancement-mode |
| Configuration | Half-bridge (high-side + low-side switch with integrated gate driver) |
| Drain-Source Voltage (VDS) | 600 V |
| On-State Resistance (RDS(on)) per switch | 500 mΩ (0.5 Ω) |
| Number of GaN Switches | 2 |
| Gate Driver Source Current | +0.29 A |
| Gate Driver Sink Current | -0.7 A |
| Integrated Bootstrap Diode | Yes (ultra-fast, low-resistance) |
| Turn-on / Turn-off dV/dt | Application-configurable (via gate resistor) |
| Package | PG-TFLGA-27-2 (TFLGA-27), 6x8 mm |
| Pin Count | 27 |
| Mounting Type | Surface Mount |
| Operating Temperature | -40 °C to +125 °C (junction 150 °C) |
| RoHS Status | Compliant |
| Reach Status | Compliant |
| Lead-Free | Yes |
| Target Applications | Totem-pole PFC, LLC converters, HF SMPS, BLDC drives |
IGI60L5050B1MXUMA1 Pin Configuration
| Pin 1 | VB — High-side bootstrap supply |
| Pin 2 | HB — High-side bootstrap return (HS) |
| Pin 3 | HO — High-side gate driver output |
| Pin 4 | NC — Not connected (per datasheet) |
| Pin 5 | HIN — High-side logic input |
| Pin 6 | LIN — Low-side logic input |
| Pin 7 | VCC — Low-side driver supply |
| Pin 8 | GND — Low-side ground |
| Pin 9 | NC — Not connected (per datasheet) |
| Pin 10 | PGA — Gate resistance configuration A |
| Pin 11 | PGB — Gate resistance configuration B |
| Pin 12 | NC — Not connected (per datasheet) |
| Pin 13 | SW — Switch node (high-side source / low-side drain) |
| Pin 14 | SW — Switch node (high-side source / low-side drain) |
| Pin 15 | SW — Switch node (high-side source / low-side drain) |
| Pin 16 | PGND — Power ground (low-side source return) |
| Pin 17 | PGND — Power ground (low-side source return) |
| Pin 18 | NC — Not connected (per datasheet) |
| Pin 19 | DRAIN — High-side drain |
| Pin 20 | DRAIN — High-side drain |
| Pin 21 | DRAIN — High-side drain |
| Pin 22 | NC — Not connected (per datasheet) |
| Pin 23 | NC — Not connected (per datasheet) |
| Pin 24 | NC — Not connected (per datasheet) |
| Pin 25 | NC — Not connected (per datasheet) |
| Pin 26 | NC — Not connected (per datasheet) |
| Pin 27 | NC — Not connected (per datasheet) |
Safe Operating Area (per switch, DC)
Typical Applications
IGI60L5050B1MXUMA1 is suitable for 6 applications: Totem-Pole Bridgeless PFC Front Stage, LLC Resonant DC-DC Converter, Photovoltaic Micro-Inverter and Optimizer, High-Frequency BLDC Motor Drive, Industrial Switched-Mode Power Supply (SMPS), 400 V EV Auxiliary and On-Board Charger.
Totem-Pole Bridgeless PFC Front Stage
The IGI60L5050B1MXUMA1 is purpose-built for totem-pole bridgeless PFC in server, telecom, and industrial SMPS. The two 500 mΩ GaN switches and integrated high/low-side gate driver operate at 65-100 kHz switching frequency, achieving >99 % efficiency and >0.99 power factor. Zero reverse-recovery charge (Qrr ≈ 0) eliminates the dead-time-induced line-frequency current distortion that plagues silicon MOSFET totem-poles. Placed in the line-side bridge ahead of the bulk capacitor, the 600 V drain rating comfortably handles 265 VAC rectified input. The integrated bootstrap diode removes an external component and the 6x8 mm chip-scale package minimizes PCB area. Estimated: at 1.5 kW output and 100 kHz switching, total loss is roughly 12-15 W per half-bridge, requiring 2-3 cm² of copper pour but no external heatsink.
Recommended
LLC Resonant DC-DC Converter
The IGI60L5050B1MXUMA1 operates as the primary-side half-bridge in 400 V to 48 V/12 V LLC resonant converters commonly used in server and telecom power supplies. Switching frequencies of 100-300 kHz are practical thanks to the integrated gate driver eliminating gate-loop inductance and the configurable turn-on/turn-off dV/dt allowing EMI tuning per design margin. The zero Qrr of GaN removes the resonant capacitor's dead-time discharge loss, gaining 1-2 % efficiency over silicon MOSFET LLC at the same frequency. The 600 V drain rating supports 400 V nominal bus with full transient margin. The 27-pin PG-TFLGA-27-2 package fits in the small converter footprint required by 1U server form factors. Estimated: a 1 kW 400 V/48 V LLC at 200 kHz sees ~8 W loss in the half-bridge with 50 mΩ RDS(on) effective after thermal optimization.
Recommended
Photovoltaic Micro-Inverter and Optimizer
The IGI60L5050B1MXUMA1 is well-suited to photovoltaic micro-inverters (250-600 W) and module-level DC power optimizers. The 600 V drain rating handles open-circuit PV string voltages up to 150 V with ample margin and supports 2-stage topologies (boost + LLC or boost + full-bridge) for 28-60 V panel-to-AC grid conversion. Zero Qrr enables high-frequency boost stage at 200 kHz+, shrinking the boost inductor by 3-4× versus 50 kHz silicon designs. The integrated driver reduces BOM count - critical in cost-sensitive MLPE markets - while the 6x8 mm PG-TFLGA-27-2 chip-scale package allows dense PCB layout under the PV junction box. AEC-Q100 qualification is not required because the part sits inside an IP67 enclosure. Estimated: a 600 W micro-inverter reaches 96.5-97 % CEC-weighted efficiency with this GaN half-bridge.
Recommended
High-Frequency BLDC Motor Drive
The IGI60L5050B1MXUMA1 functions as one of three half-bridges in a 3-phase BLDC/PMSM motor drive for industrial automation, robotics, and e-mobility. The 600 V / 500 mΩ rating suits drives up to ~300 W continuous at 100-300 VDC bus. Switching frequencies of 50-100 kHz move PWM above the audible band, eliminating motor whine. Zero Qrr removes dead-time-induced phase-current distortion at low RPM - critical for smooth torque ripple in servo applications. The integrated gate driver cuts the per-phase BOM cost versus discrete GaN + driver designs. Place three IGI60L5050B1MXUMA1 parts on a 3-phase inverter board with three current-sense shunts and an external MCU (XMC1300 or XMC4400). Estimated: 200 W continuous at 48 VDC bus is achievable without heatsink.
Recommended
Industrial Switched-Mode Power Supply (SMPS)
The IGI60L5050B1MXUMA1 powers the primary-side half-bridge of industrial 24 V/48 V SMPS in factory automation, PLC, and CNC equipment. 600 V drain rating handles universal 85-265 VAC rectified input directly without an additional boost PFC stage (for sub-100 W supplies) or as the second stage in 2-stage designs. The 500 mΩ RDS(on) and zero Qrr give 94-96 % efficiency at 200 kHz - well above the 80-85 % typical of silicon MOSFET designs at the same frequency. The configurable dV/dt via external gate resistor lets designers tune EMI against industrial EN 55011 Class A limits. The PG-TFLGA-27-2 package allows compact DIN-rail-mountable form factors. Estimated: a 200 W industrial SMPS with this GaN half-bridge achieves 95 % efficiency at full load.
Recommended
400 V EV Auxiliary and On-Board Charger
The IGI60L5050B1MXUMA1 is increasingly used in 400 V EV auxiliary converters (e.g., 400 V to 12 V/48 V DC-DC) and in the PFC + DC-DC stages of on-board chargers (OBC). The 600 V rating provides comfortable margin on a 400 V nominal bus with regenerative-braking transients. GaN switching at 200+ kHz shrinks the OBC magnetics and filter capacitors by 2-3× versus silicon IGBT designs, reducing OBC weight and volume - a critical EV design metric. The zero Qrr enables hard-switching boost PFC stages without audible noise. Note that AEC-Q100 qualification is required for EV traction inverter use; the IGI60L5050B1MXUMA1 is suitable for auxiliary and OBC but the AEC-Q100 qualified IGI60L family variants should be used for safety-critical paths. Estimated: a 3.3 kW OBC with this GaN half-bridge reaches 96-97 % peak efficiency.
Recommended
Recommended Products Summary
Engineering reference data for IGI60L5050B1MXUMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IGI60L5050A1MXUMA1 | IGI60L5050B1M |
|---|---|---|---|
| Package | PG-TFLGA-27-2 (6x8 mm) | PG-TFLGA-27-2 (6x8 mm) - same | PG-TFLGA-27-2 (6x8 mm) - same |
| Brand | Infineon | Infineon | Infineon |
| Drain-Source Voltage | 600 V | 600 V | 600 V |
| On-State Resistance (per switch) | 500 mΩ | 500 mΩ | 500 mΩ |
| Integrated Gate Driver | Yes (high-side + low-side) | Yes (high-side + low-side) | Yes (high-side + low-side) |
| Integrated Bootstrap Diode | Yes | Yes | Yes |
| Gate Drive Source/Sink Current | +0.29 A / -0.7 A | +0.29 A / -0.7 A | +0.29 A / -0.7 A |
| Speed Grade / Variant | B1 (standard) | A1 (alternative speed grade) | B1 (bare part, no reel suffix) |
Key Differentiators
- Zero reverse-recovery charge enables totem-pole bridgeless PFC at 99 % efficiency (vs Discrete silicon 600 V MOSFET half-bridge)
- Integrated gate driver eliminates parasitic gate-loop inductance (vs Discrete GaN FETs with external gate driver IC)
- Integrated ultra-fast bootstrap diode saves BOM and PCB area (vs External high-voltage bootstrap diode (e.g., UF4007 or BAS21))
Design Notes
The PG-TFLGA-27-2 chip-scale package requires careful PCB layout to achieve the datasheet performance. Keep the high-side gate-loop area (HB, HO, HS traces) under 5 mm² total loop area to minimize gate-loop inductance below 2 nH. Place the input ceramic capacitors (typically 100 nF X7R) within 2 mm of the SW and PGND pads to minimize the power-loop inductance. Use 4-layer PCB with a continuous ground plane directly under the device; the exposed top thermal pad must be soldered to a copper pour of at least 50 mm² on the top layer, with thermal vias (0.3 mm, 1 mm pitch) to inner ground planes for heat spreading.
Estimated thermal analysis: at full load with each switch dissipating P_loss = I² × R_DS(on) + switching losses, junction temperature must stay below 150 °C. At 2 A continuous per switch (1 A in each GaN FET, half-bridge switching at 200 kHz) total per-switch loss is roughly 2.5 W steady-state. The PG-TFLGA-27-2 has a typical junction-to-PCB thermal resistance of ~1 °C/W with proper layout, so a 2.5 W loss yields only ~2.5 °C rise above board temperature - excellent thermal performance. Without proper thermal vias and copper pour, theta_JB can exceed 10 °C/W and cause thermal shutdown. Always measure junction temperature via the built-in temperature sensor (if exposed) or via thermal camera in qualification.
Three common pitfalls to avoid: (1) Bootstrap capacitor under-sizing - the external bootstrap cap (typically 100 nF X7R between VB and HS) must recharge each low-side cycle; at 200 kHz switching with 100% duty cycle this gives only 5 µs recharge time. Use low-leakage ceramic (C0G/NP0 or X7R with 25 V rating) and verify VB voltage stays above UVLO threshold (typically ~4.5 V) at maximum duty cycle. (2) Logic input threshold - the HIN/LIN inputs use CMOS logic with typically 1.6 V/1.3 V thresholds; verify the MCU GPIO drive level matches. (3) SW-node dV/dt overshoot - excessive dV/dt (>50 V/ns) can cause Miller-induced false triggering of the low-side; tune PGA/PGB gate-resistor pins to limit dV/dt to ~30 V/ns for typical applications.
EMI mitigation strategy: configure the PGA/PGB pins to select the optimal gate resistance (typically 10-47 Ω range) to balance switching loss against EMI margin. At light load reduce switching frequency (frequency foldback) to skip switching cycles and reduce conducted EMI. Add a small RC snubber (1-4.7 Ω + 100-470 pF) across each GaN switch only if radiated EMI exceeds EN 55011 Class A limits after gate-resistor optimization. The chip-scale package has very low parasitic inductance compared to TO-247 discrete GaN, so typically no snubber is required - verify with near-field probe scan.
Compliance Information
RoHS and REACH compliant per Infineon product declaration and distributor listings. Not AEC-Q100 qualified - the IGI60L automotive-grade variants exist for EV applications. Halogen-free status not explicitly stated in the verified distributor data.
