IPA60R190C6 vs IPB60R190C6ATMA1 Comparison
Detailed side-by-side comparison of IPA60R190C6 by Infineon and IPB60R190C6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPA60R190C6 | IPB60R190C6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.55 | $1.45 |
| Manufacturer | Infineon Technologies | — |
| Series | CoolMOS C6 | — |
| Technology | Superjunction (SJ) / CoolMOS | CoolMOS C6 Superjunction N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at TC=25C | 20.2 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 190 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 3.5 V | — |
| Gate-Source Voltage VGS max | +/- 20 V | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg typ] | — |
| Rise Time tr typ | [DATA_NEEDED: tr] | — |
| Fall Time tf typ | [DATA_NEEDED: tf] | — |
| Avalanche Energy EAS | [DATA_NEEDED: EAS] | — |
| Power Dissipation Ptot at TC=25C | [DATA_NEEDED: Ptot] | — |
| Operating Temperature Range | -55C to +150C | -55C to +150C |
| Package | TO-220 FullPAK (TO-220FP-3) | PG-TO263-3 (D2PAK) |
| Mounting Type | Through-Hole (isolated tab) | Surface Mount |
| Channel Type | N-Channel enhancement mode | — |
| RoHS Status | Compliant | Compliant |
| Channel Polarity | N-Channel | — |
| Continuous Drain Current (ID) at Tc=25C | — | 20.2 A |
| Power Dissipation (PD) at Tc=25C | — | 151 W |
| On-Resistance RDS(on) max at VGS=10V | — | 190 mOhm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | — | 3.5 V (typ) |
| Total Gate Charge (Qg) typ | — | 32 nC |
| Pin Count | — | 3 (Gate, Drain, Source) |
| MSL Level | — | 1 |
| Avalanche Energy Rated | — | Yes (EAS per datasheet) |