IPA60R190C6 vs IPB60R190C6ATMA1 对比
详细并排对比 IPA60R190C6 出自 Infineon 和 IPB60R190C6ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPA60R190C6 | IPB60R190C6ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.55 | $1.45 |
| Manufacturer | Infineon Technologies | — |
| Series | CoolMOS C6 | — |
| Technology | Superjunction (SJ) / CoolMOS | CoolMOS C6 Superjunction N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at TC=25C | 20.2 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 190 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 3.5 V | — |
| Gate-Source Voltage VGS max | +/- 20 V | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg typ] | — |
| Rise Time tr typ | [DATA_NEEDED: tr] | — |
| Fall Time tf typ | [DATA_NEEDED: tf] | — |
| Avalanche Energy EAS | [DATA_NEEDED: EAS] | — |
| Power Dissipation Ptot at TC=25C | [DATA_NEEDED: Ptot] | — |
| 工作温度范围 | -55C to +150C | -55C to +150C |
| 封装 | TO-220 FullPAK (TO-220FP-3) | PG-TO263-3 (D2PAK) |
| 安装类型 | Through-Hole (isolated tab) | Surface Mount |
| Channel Type | N-Channel enhancement mode | — |
| RoHS 状态 | Compliant | Compliant |
| Channel Polarity | N-Channel | — |
| Continuous Drain Current (ID) at Tc=25C | — | 20.2 A |
| Power Dissipation (PD) at Tc=25C | — | 151 W |
| On-Resistance RDS(on) max at VGS=10V | — | 190 mOhm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | — | 3.5 V (typ) |
| Total Gate Charge (Qg) typ | — | 32 nC |
| 引脚数量 | — | 3 (Gate, Drain, Source) |
| MSL 等级 | — | 1 |
| Avalanche Energy Rated | — | Yes (EAS per datasheet) |