IPB020NE7N3GATMA1 vs IPB072N15N3GATMA1 Comparison
Detailed side-by-side comparison of IPB020NE7N3GATMA1 by Infineon and IPB072N15N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB020NE7N3GATMA1 - 75V 120A N-Channel MOSFET | Infineon OptiMOS
IPB020NE7N3GATMA1 ✓ ActiveSpecification Comparison
| Parameter | IPB020NE7N3GATMA1 | IPB072N15N3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPB020NE7N3GATMA1 | — |
| Technology | OptiMOS 3 N-Channel Power MOSFET | OptiMOS 3 (trench MOSFET) |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 75 V | — |
| Continuous Drain Current (ID) at Tc | 120 A | — |
| Power Dissipation (PD) at Tc | 300 W | — |
| On-State Resistance RDS(on) | 2.0 mΩ typical (per part number code) | — |
| Package | PG-TO263-3 (D²PAK, TO-263AB) | PG-TO263-3-2 (D2PAK-2, 3 pins + tab) |
| Mounting Type | Surface Mount | Surface Mount |
| Configuration | Single | — |
| Operating Temperature Range | -55C to +175C (junction) | -55 C to +175 C |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) min/typ/max] | — |
| Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL Level | [DATA_NEEDED: MSL rating] | — |
| Avalanche Rated | Yes (per OptiMOS 3 family datasheet) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 150 V |
| Continuous Drain Current (I_D, Tc=25C) | — | 100 A |
| Continuous Drain Current (I_D, Tc=100C) | — | [DATA_NEEDED: I_D at Tc=100C] |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed I_DM] |
| Maximum Power Dissipation (P_D, Tc=25C) | — | 300 W |
| R_DS(on) typical at VGS=10V | — | 7.2 mOhm |
| R_DS(on) max at VGS=10V | — | [DATA_NEEDED: max R_DS(on) at VGS=10V] |
| Gate-Source Voltage (V_GS) max | — | +/-20 V |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical] |
| Total Gate Charge (Q_g) | — | [DATA_NEEDED: Q_g typical at VGS=10V] |
| Avalanche Energy Rated | — | Yes (single-pulse E_AS) |
| Intrinsic Body Diode | — | Yes (low Q_rr, sync-rectifier capable) |
| Manufacturer Ordering Code Suffix | — | GATMA1 (tape and reel, 1000 pcs) |