IPB020NE7N3GATMA1 vs IPB072N15N3GATMA1 비교

다음의 상세 나란히 비교: IPB020NE7N3GATMA1 제조: Infineon 및 IPB072N15N3GATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IPB020NE7N3GATMA1 IPB072N15N3GATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $2.31 $2.84
Manufacturer Infineon Technologies —
Part Number IPB020NE7N3GATMA1 —
Technology OptiMOS 3 N-Channel Power MOSFET OptiMOS 3 (trench MOSFET)
Polarity N-Channel —
Drain-Source Voltage (VDS) 75 V —
Continuous Drain Current (ID) at Tc 120 A —
Power Dissipation (PD) at Tc 300 W —
On-State Resistance RDS(on) 2.0 mΩ typical (per part number code) —
패키지 PG-TO263-3 (D²PAK, TO-263AB) PG-TO263-3-2 (D2PAK-2, 3 pins + tab)
실장 유형 Surface Mount Surface Mount
Configuration Single —
동작 온도 범위 -55C to +175C (junction) -55 C to +175 C
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) min/typ/max] —
Gate Charge Qg [DATA_NEEDED: total gate charge] —
RoHS 상태 Compliant Compliant
Lead-Free Yes —
MSL 레벨 [DATA_NEEDED: MSL rating] —
Avalanche Rated Yes (per OptiMOS 3 family datasheet) —
FET Type — N-Channel
Drain-Source Voltage (V_DS) — 150 V
Continuous Drain Current (I_D, Tc=25C) — 100 A
Continuous Drain Current (I_D, Tc=100C) — [DATA_NEEDED: I_D at Tc=100C]
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed I_DM]
Maximum Power Dissipation (P_D, Tc=25C) — 300 W
R_DS(on) typical at VGS=10V — 7.2 mOhm
R_DS(on) max at VGS=10V — [DATA_NEEDED: max R_DS(on) at VGS=10V]
Gate-Source Voltage (V_GS) max — +/-20 V
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical]
Total Gate Charge (Q_g) — [DATA_NEEDED: Q_g typical at VGS=10V]
Avalanche Energy Rated — Yes (single-pulse E_AS)
Intrinsic Body Diode — Yes (low Q_rr, sync-rectifier capable)
Manufacturer Ordering Code Suffix — GATMA1 (tape and reel, 1000 pcs)

데이터시트 & 자료

모든 제품 보기 BOM 생성 견적 요청