IPB072N15N3GATMA1 - 150V 100A N-Ch OptiMOS 3 MOSFET | Infineon
MPN: IPB072N15N3GATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.52 | $4.52 |
| 10 | $4.07 | $40.70 |
| 100 | $3.59 | $359.00 |
| 500 | $3.21 | $1,605.00 |
| 1,000 | $2.84 | $2,840.00 |
Drop-in alternatives for IPB072N15N3GATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPB107N20N3GATMA1
✅ Drop-In✓ In Stock
$1.18 / Unit
View Datasheet →BSC123N08NS3GATMA1
✅ Drop-In✓ In Stock
$0.71 / Unit
View Datasheet →IPD082N10N3GATMA1
✅ Drop-In✓ In Stock
$1.14 / Unit
View Datasheet →BSZ123N08NS3GATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
IPB072N15N3GATMA1 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Technology | OptiMOS 3 (trench MOSFET) |
| Drain-Source Voltage (V_DS) | 150 V |
| Continuous Drain Current (I_D, Tc=25C) | 100 A |
| Maximum Power Dissipation (P_D, Tc=25C) | 300 W |
| R_DS(on) typical at VGS=10V | 7.2 mOhm |
| Gate-Source Voltage (V_GS) max | +/-20 V |
| Operating Temperature Range | -55 C to +175 C |
| Package | PG-TO263-3-2 (D2PAK-2, 3 pins + tab) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| Avalanche Energy Rated | Yes (single-pulse E_AS) |
| Intrinsic Body Diode | Yes (low Q_rr, sync-rectifier capable) |
| Manufacturer Ordering Code Suffix | GATMA1 (tape and reel, 1000 pcs) |
IPB072N15N3GATMA1 Pin Configuration
| Pin 1 | Gate — Gate drive input; standard 10V drive, +/-20V V_GS absolute max |
| Pin 2 | Drain — Power drain terminal; internally connected to the metal tab |
| Pin 3 | Source — Power source terminal; reference for V_GS and gate drive return |
| Pin Tab | Drain (Tab) — Backside metal tab electrically tied to pin 2 (Drain); serves as primary thermal mounting surface |
Safe Operating Area (SOA) - DC, VGS=10V, Tc=25C
Typical Applications
IPB072N15N3GATMA1 is suitable for 6 applications: AC-DC SMPS Primary-Side Switching, Synchronous Rectification in Isolated DC-DC, 48V Telecom Hot-Swap Controller Switch, Solar String Inverter DC-Side Switching, Industrial Motor Drive H-Bridge, E-Bike and E-Scooter Battery Management.
AC-DC SMPS Primary-Side Switching
The IPB072N15N3GATMA1 serves as the primary-side main switch in 100-200 W AC-DC flyback, forward, and half-bridge converters where rectified mains peaks at 140-180 V. Its 150 V V_DS rating tolerates this voltage plus inductive spike margin, while the 7.2 milliohm R_DS(on) at V_GS=10V keeps conduction loss manageable at 5-10 A primary-side RMS current typical of 150 W designs. OptiMOS 3's low Q_rr body diode reduces commutation loss in CCM PFC front-end stages. The D2PAK-2 tab solders directly to a 1-square-inch copper pour on the primary-side heatsink, sustaining continuous 100 A peaks without external heat sinking. Pair this part with the Infineon ICE2PCS02GXUMA1 CCM PFC controller for a turnkey reference design validated in the Infineon application note AN-2014.
Recommended
Synchronous Rectification in Isolated DC-DC
In isolated 48 V to 5/12 V DC-DC converters, the IPB072N15N3GATMA1 operates as the secondary-side synchronous rectifier replacing Schottky diodes to achieve 2-3 percent efficiency improvement. Its 150 V V_DS provides margin above the 48 V reflected secondary voltage in forward or push-pull topologies, while the 7.2 milliohm R_DS(on) at 100 A conduction handles full-load current with minimal drop. The intrinsic body diode supports CCM operation at high duty cycle without external anti-parallel diodes, simplifying the layout and reducing BOM cost. Switching frequency compatibility to 200 kHz is enabled by OptiMOS 3's low Q_g figure-of-merit. Use a gate transformer or isolated gate driver such as the Infineon 1ED3323MC12NXUMA1 to drive the synchronous FET from the secondary-side controller.
Recommended
48V Telecom Hot-Swap Controller Switch
The IPB072N15N3GATMA1 functions as the main pass-FET in 48 V telecom hot-swap controllers where inrush current limiting, short-circuit protection, and OR-ing redundancy are required. Its 150 V V_DS provides 3x safety margin above the 48 V nominal bus, accommodating transient voltage spikes from backplane inductance during hot-plug events. The 7.2 milliohm typical R_DS(on) at 100 A continuous current keeps the steady-state voltage drop below 1 V at full load, minimizing conduction loss across the FET. Infineon's OptiMOS 3 process delivers robust avalanche-rated single-pulse energy, allowing the FET to absorb the energy of a short-circuit event during the controller's current-limit blanking time. The D2PAK-2 footprint supports high-current surface-mount assembly on the backplane PCB without the through-hole insertion cost of TO-220 alternatives.
Recommended
Solar String Inverter DC-Side Switching
The IPB072N15N3GATMA1 is suited for solar micro-inverter and single-string inverter DC-side switching at up to 150 V DC open-circuit panel voltage, which can rise to 170 V at cold-temperature Voc. Its 150 V breakdown comfortably accommodates this voltage plus switching ringing margin, and the 7.2 milliohm R_DS(on) handles 50-100 A peak inverter current typical of 3-5 kW residential string inverters. OptiMOS 3's low intrinsic body-diode Q_rr enables high-frequency CCM operation in the boost PFC stage preceding the DC-AC inversion, raising efficiency by 1-2 percent versus prior-generation MOSFETs. The D2PAK-2 tab provides direct thermal coupling to the inverter chassis heatsink via PCB copper, supporting the 300 W maximum power dissipation rating without active cooling in well-ventilated outdoor enclosures.
Recommended
Industrial Motor Drive H-Bridge
In 24-96 V industrial motor drive H-bridges, the IPB072N15N3GATMA1 serves as the high-side and low-side switches controlling brushed DC or brushless DC motor windings. The 150 V V_DS rating covers 96 V DC bus plus back-EMF transients during regenerative braking events. At 100 A continuous drain current the part directly drives fractional-horsepower motors without paralleling devices, simplifying the BOM and reducing gate-driver complexity. The OptiMOS 3 process's low gate charge enables 20-50 kHz PWM frequency for quiet operation and fine speed control, while the 7.2 milliohm R_DS(on) limits conduction loss in the H-bridge to under 5 percent at 50 A. Combine with the Infineon 2ED2183S06FXUMA1 600 V gate driver for 96 V bus designs requiring reinforced isolation.
Recommended
E-Bike and E-Scooter Battery Management
In 36-48 V lithium-ion battery packs for e-bikes, e-scooters, and light electric vehicles, the IPB072N15N3GATMA1 acts as the main disconnect FET and pre-charge switch for the BMS (battery management system). The 150 V V_DS tolerates the 54 V peak voltage of a fully charged 13S lithium pack plus inductive kickback from the motor controller during regen braking. The 7.2 milliohm R_DS(on) limits continuous conduction loss during motor-drive assist at 30-50 A sustained current, extending range by 2-3 percent versus higher-R_DS(on) alternatives. Low Q_rr body diode supports bidirectional current flow without external diode bridges, while the surface-mount D2PAK-2 package reduces pack-assembly cost versus through-hole TO-220 alternatives. For lower-voltage 24 V packs consider the IPB107N20N3GATMA1 drop-in alternative for additional V_DS headroom.
Recommended
Recommended Products Summary
Engineering reference data for IPB072N15N3GATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPB107N20N3GATMA1 | BSC123N08NS3GATMA1 | IPD082N10N3GATMA1 | BSZ123N08NS3GATMA1 |
|---|---|---|---|---|---|
| Package | PG-TO263-3-2 (D2PAK-2) | PG-TO263-3-2 (D2PAK-2) - same | PG-TO263-3-2 (D2PAK-2) - same | PG-TO263-3-2 (D2PAK-2) - same | PG-TO263-3-2 (D2PAK-2) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| V_DS (Drain-Source Voltage) | 150 V | 200 V | 80 V | 100 V | 80 V |
| Continuous Drain Current (Tc=25C) | 100 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| R_DS(on) typical at VGS=10V | 7.2 mOhm | 10.7 mOhm | [DATA_NEEDED] | 8.2 mOhm | [DATA_NEEDED] |
| Technology Generation | OptiMOS 3 | OptiMOS 3 | OptiMOS 5 | OptiMOS 3 | OptiMOS 5 |
| Maximum Power Dissipation | 300 W | 300 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Unit Price (qty 1, USD) | 4.52 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Highest V_DS in 7 mOhm-class D2PAK-2 OptiMOS family (vs IPD082N10N3GATMA1)
- Lower R_DS(on) at same voltage class (vs BSZ123N08NS3GATMA1)
- OptiMOS 3 process maturity for high-volume AC-DC SMPS (vs BSC123N08NS3GATMA1 (OptiMOS 5))
Design Notes
Estimated: at I_D = 50 A continuous and V_GS = 10 V, conduction loss equals I^2 x R_DS(on) = 50^2 x 0.0072 = 18 W. With the D2PAK-2 tab soldered to a 1 sq-in copper pour on a 4-layer FR-4 board, R_thJA is approximately 40 C/W without thermal vias and 15-20 C/W with a 4x4 array of 0.3 mm thermal vias under the tab. Without vias, junction temperature rise is roughly 18 W x 40 C/W = 720 C, which exceeds the 175 C maximum; with vias the rise is 18 x 17.5 = 315 C, still requiring either reduced current or an external heatsink attached to the tab.
Gate-drive loop area (gate-drive IC output -> gate resistor -> MOSFET gate -> source lead -> back to gate-drive ground) must be minimized to less than 1 sq-cm to limit parasitic inductance and ringing. Place the gate-drive IC within 5 mm of the gate pin. Use a 10-100 ohm gate-source resistor in parallel with the gate-drive pull-up to damp LC resonance caused by the gate capacitance and source-lead inductance. The drain-source loop (drain tab -> load -> ground -> source pin) is more critical at high di/dt - keep this loop compact and use wide copper pours to minimize voltage overshoot at turn-off.
Avoid exceeding the +/-20 V V_GS absolute maximum rating; typical 10 V drive is ideal, but gate-oscillation transients during switching can overshoot. Place a 10V Zener diode from gate to source as close to the MOSFET pins as possible to clamp transients. Do not exceed 150 V V_DS, including inductive spike overshoot during turn-off; add a snubber (RC or RCD) across the primary winding in flyback converters or across the MOSFET in hard-switched half-bridge designs to absorb leakage-inductance energy. The intrinsic body diode has limited reverse-recovery capability - do not use this part in continuous-conduction synchronous rectification above 100 kHz without verifying Q_rr against the controller's dead-time requirements.
The D2PAK-2 tab must be soldered to a substantial copper pour of at least 1 sq-inch (645 sq-mm) on the top layer. Add 4-9 thermal vias (0.3 mm diameter, 1.0 mm pitch) directly under the tab to transfer heat to the bottom layer or inner copper planes. Use a stencil aperture of 0.13 mm thickness to ensure adequate solder volume under the tab without bridging to the source pin. Keep the gate-source Kelvin connection trace short and direct to minimize common-source inductance that would otherwise slow switching and increase switching loss.
Compliance Information
RoHS and REACH compliant per Infineon product declaration. Lead-free (Pb-free) reflow soldering compatible per JEDEC J-STD-020. Halogen-free per IEC 61249-2-21. Not AEC-Q100 qualified - this part targets industrial and telecom, not automotive. For AEC-Q100 qualified 150 V MOSFET in similar package, contact Infineon for automotive-grade part number.
