IPB024N10N5ATMA1 vs BSF134N10NJ3GXUMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB024N10N5ATMA1 disebabkan oleh Infineon dan BSF134N10NJ3GXUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPB024N10N5ATMA1 - 100V 2.4mΩ OptiMOS 5 N-Channel MOSFET | Infineon
IPB024N10N5ATMA1 ✓ AktifInfineon
BSF134N10NJ3GXUMA1 - 100V OptiMOS N-Ch MOSFET, 9A/40A | Infineon
BSF134N10NJ3GXUMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IPB024N10N5ATMA1 | BSF134N10NJ3GXUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | OptiMOS 5 N-Channel MOSFET (trench, shielded gate) | Trench-gate OptiMOS planar |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, TC=25C) | 180 A | — |
| Power Dissipation (PD, TC=25C) | 250 W | — |
| On-Resistance RDS(on) max @ VGS=10V | 2.4 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) value] | — |
| Gate Charge Qg typ @ VGS=10V | [DATA_NEEDED: Qg total gate charge] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total gate charge] | — |
| Input Capacitance Ciss | [DATA_NEEDED: Ciss value] | — |
| Output Capacitance Coss | [DATA_NEEDED: Coss value] | — |
| Reverse Recovery Charge Qrr | [DATA_NEEDED: Qrr value] | — |
| Gambaran Suhu Operasi | -55C to +175C (junction) | -55°C to +150°C (TJ max) [DATA_NEEDED: exact Min/Max from datasheet] |
| Kemasan | PG-TO263-7 (D2PAK-7) | MG-WDSON-2 (CanPAK M) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 (unlimited floor life at <30C/85% RH) | [DATA_NEEDED: MSL rating] |
| Packaging | Tape & Reel (13-inch reel) | — |
| Boson Bebas | Yes (per Infineon product family policy) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 100 V |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25°C | — | 9 A |
| Continuous Drain Current (ID) at TC=25°C | — | 40 A |
| Power Dissipation (PD) at TA=25°C | — | 2.2 W |
| Power Dissipation (PD) at TC=25°C | — | 43 W |
| Configuration | — | Single with built-in diode |
| Terminal Position | — | Bottom |
| Terminal Finish | — | Silver Nickel |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| RDS(on) at VGS=10V | — | [DATA_NEEDED: RDS(on) max value] |
| Body Diode Reverse Recovery | — | [DATA_NEEDED: trr value] |