IPB051N15NM6ATMA1 vs BSC050N04LSGATMA1 Comparison
Detailed side-by-side comparison of IPB051N15NM6ATMA1 by Infineon and BSC050N04LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB051N15NM6ATMA1 - 150V 5.1mOhm OptiMOS 6 N-Channel MOSFET | Infineon
IPB051N15NM6ATMA1 β ActiveInfineon
BSC050N04LSGATMA1
BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon
BSC050N04LSGATMA1 β ActiveSpecification Comparison
| Parameter | IPB051N15NM6ATMA1 | BSC050N04LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.02 | $0.41 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 6 | β |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 150 V | β |
| Continuous Drain Current (ID) at TA=25C | 18 A | β |
| Continuous Drain Current (ID) at TC=25C | 139 A | β |
| RDS(on) Typical at VGS=10 V | 5.1 mOhm | β |
| Gate Charge (Qg) Typical | 51 nC | β |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | β |
| Power Dissipation (PD) at TA=25C | 3.8 W | β |
| Power Dissipation (PD) at TC=25C | 234 W | β |
| Operating Temperature Range | -55C to +175C | -55C to +150C |
| Package / Case | PG-TO263-3-2 (D2PAK) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (Drain, Source, Gate) | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 |
| Avalanche Rated | Yes | β |
| Drain-to-Source Voltage (VDS) | β | 40 V |
| Gate-to-Source Voltage (VGS) | β | Β±20 V |
| Continuous Drain Current at 25C (ID, Ta) | β | 18 A |
| Continuous Drain Current at 25C (ID, Tc) | β | 85 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current IDM] |
| Power Dissipation at Ta (PD) | β | 2.5 W |
| Power Dissipation at Tc (PD) | β | 57 W |
| On-State Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| On-State Resistance (RDS(on)) at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ/min/max] |
| Technology | β | OptiMOS 3 (trench MOSFET) |
| Package | β | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) |
| Avalanche Energy Rated | β | Yes (single-pulse avalanche) |