IPB100N12S305ATMA2 vs BSC076N04NDATMA1 Comparison

Detailed side-by-side comparison of IPB100N12S305ATMA2 by Infineon and BSC076N04NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPB100N12S305ATMA2 BSC076N04NDATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 120V OptiMOS 3
Transistor Type N-Channel MOSFET —
Drain-Source Voltage (VDS) 120 V —
Continuous Drain Current (ID) at Tc 100 A —
Power Dissipation (PD) at Tc 300 W —
Drain-Source On-Resistance RDS(on) 0.0048 ohm (4.8 mΩ) at VGS=10 V —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] 4 V (max, typical)
Maximum Junction Temperature 175 °C —
Avalanche Energy (EAS) 1445 mJ —
Package / Case PG-TO263-3-2 (D2PAK) PG-TDSON-8-4 (SuperSO8, 5x6 mm)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 °C to +175 °C (TJ) —
Automotive Qualification AEC-Q101 qualified —
RoHS Status Compliant —
MSL Level [DATA_NEEDED: MSL rating] —
Configuration — Dual N-Channel (independent MOSFETs)
Drain-Source Voltage (VDS) max — 40 V
Continuous Drain Current (ID) — 20 A (Tc)
On-Resistance RDS(on) max — 7.6 mOhm
Power Dissipation (Ta) — 2.3 W
Power Dissipation (Tc) — 65 W
Technology — Trench MOSFET (OptiMOS 3)
Qgd/Qgs Ratio — < 0.8 (high shot-through immunity)
Operating Junction Temperature — -55 C to +175 C
RoHS / Pb-Free — Compliant (Pb-free plating)
FET Type — 2x N-Channel MOSFET array

Datasheets & Resources

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