IPB100N12S305ATMA2 vs BSC076N04NDATMA1 Vergleich
Detaillierter Direktvergleich von IPB100N12S305ATMA2 von Infineon und BSC076N04NDATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPB100N12S305ATMA2 | BSC076N04NDATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,95 | $0,82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 120V | OptiMOS 3 |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 120 V | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Power Dissipation (PD) at Tc | 300 W | — |
| Drain-Source On-Resistance RDS(on) | 0.0048 ohm (4.8 mΩ) at VGS=10 V | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | 4 V (max, typical) |
| Maximum Junction Temperature | 175 °C | — |
| Avalanche Energy (EAS) | 1445 mJ | — |
| Gehäuse / Bauform | PG-TO263-3-2 (D2PAK) | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55 °C to +175 °C (TJ) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS-Status | Compliant | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | — |
| Configuration | — | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | — | 40 V |
| Continuous Drain Current (ID) | — | 20 A (Tc) |
| On-Resistance RDS(on) max | — | 7.6 mOhm |
| Power Dissipation (Ta) | — | 2.3 W |
| Power Dissipation (Tc) | — | 65 W |
| Technology | — | Trench MOSFET (OptiMOS 3) |
| Qgd/Qgs Ratio | — | < 0.8 (high shot-through immunity) |
| Betriebs-Sperrschichttemperatur | — | -55 C to +175 C |
| RoHS / Pb-Free | — | Compliant (Pb-free plating) |
| FET Type | — | 2x N-Channel MOSFET array |