IPB100N12S305ATMA2 vs IRF1310NSTRLPBF Comparison

Detailed side-by-side comparison of IPB100N12S305ATMA2 by Infineon and IRF1310NSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPB100N12S305ATMA2 IPB100N12S305ATMA2 - 120V 100A N-Ch MOSFET | Infineon OptiMOS 5

IPB100N12S305ATMA2 - 120V 100A N-Ch MOSFET | Infineon OptiMOS 5

IPB100N12S305ATMA2 βœ“ Active
Infineon
IRF1310NSTRLPBF IRF1310NSTRLPBF - 100V 42A N-Channel MOSFET | Infineon D2PAK

IRF1310NSTRLPBF - 100V 42A N-Channel MOSFET | Infineon D2PAK

IRF1310NSTRLPBF βœ“ Active

Specification Comparison

Parameter IPB100N12S305ATMA2 IRF1310NSTRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.95 $0.84
Manufacturer Infineon Technologies β€”
Series OptiMOS 5 120V β€”
Transistor Type N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 120 V 100 V
Continuous Drain Current (ID) at Tc 100 A β€”
Power Dissipation (PD) at Tc 300 W β€”
Drain-Source On-Resistance RDS(on) 0.0048 ohm (4.8 mΞ©) at VGS=10 V β€”
Gate-Source Voltage (VGS) max Β±20 V [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] [DATA_NEEDED: VGS(th) typical]
Maximum Junction Temperature 175 Β°C β€”
Avalanche Energy (EAS) 1445 mJ β€”
Package / Case PG-TO263-3-2 (D2PAK) β€”
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 Β°C to +175 Β°C (TJ) -55C to +175C
Automotive Qualification AEC-Q101 qualified β€”
RoHS Status Compliant β€”
MSL Level [DATA_NEEDED: MSL rating] β€”
Continuous Drain Current (ID) at TC=25C β€” 42 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V β€” 36 mOhm
Total Gate Charge (Qg) β€” 73.3 nC
Power Dissipation (PD) at TC=25C β€” 160 W
Power Dissipation (PD) at TA=25C β€” 3.8 W
Package β€” D2PAK (TO-263AB)
Technology β€” IR MOSFET (HEXFET)
Built-in Diode β€” Yes (intrinsic body diode)
Lead-Free / RoHS β€” Yes (PBF suffix)
Configuration β€” Single with built-in diode

Datasheets & Resources

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