IPB110P06LMATMA1 vs IPP037N08N3GXKSA1 Comparison
Detailed side-by-side comparison of IPB110P06LMATMA1 by Infineon and IPP037N08N3GXKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPP037N08N3GXKSA1 - 80V 100A 3.7mΞ© OptiMOS 3 MOSFET | Infineon
IPP037N08N3GXKSA1 β ActiveSpecification Comparison
| Parameter | IPB110P06LMATMA1 | IPP037N08N3GXKSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.31 | $1.32 |
| FET Type | P-Channel | N-Channel |
| Technology | OptiMOS (trench MOSFET) | MOSFET (Metal Oxide) - OptiMOSβ’ 3 |
| Drain-Source Voltage (VDS) | -60 V | β |
| Continuous Drain Current (ID) at TC=25C | -100 A | β |
| Maximum Power Dissipation (PD) at TC=25C | 300 W | β |
| On-State Resistance (RDS(on) max) at VGS=10V | 11 mOhm @ ID=100A | β |
| Gate Threshold Voltage (VGS(th) max) | 2 V @ ID=5.55 mA | β |
| Gate-Source Voltage (VGS max) | +/-20 V | β |
| Operating Temperature Range | -55 C to +175 C (TJ) | -55Β°C to +175Β°C (junction) |
| Package / Case | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) | β |
| Mounting Type | Surface Mount | Through Hole |
| Supplier Device Package | PG-TO263-3-2 | β |
| Gate Drive Level | Logic-level compatible | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Drain to Source Voltage (Vdss) | β | 80 V |
| Continuous Drain Current (Id) @ Tc=25Β°C | β | 100 A |
| RDS(on) Max @ VGS=10V | β | 3.75 mΞ© |
| Drive Voltage (Max RDS(on), Min RDS(on)) | β | 6 V, 10 V |
| Power Dissipation (Pd) @ Tc=25Β°C | β | 214 W |
| Package | β | PG-TO220-3 (Through Hole) |
| Pin Count | β | 3 |
| Gate Threshold Voltage (Vgs(th)) | β | [DATA_NEEDED: Vgs(th) typ/min/max] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typ @ VGS=10V] |
| Avalanche Energy Rating (EAS) | β | [DATA_NEEDED: EAS] |