IPB120N04S402ATMA1 vs BSC019N04LSTATMA1 Comparison
Detailed side-by-side comparison of IPB120N04S402ATMA1 by Infineon and BSC019N04LSTATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB120N04S402ATMA1 - 40V 120A OptiMOS-T2 N-FET D2PAK | Infineon
IPB120N04S402ATMA1 β ActiveInfineon
BSC019N04LSTATMA1
BSC019N04LSTATMA1 - 40V N-Ch OptiMOS 5 Power MOSFET | Infineon
BSC019N04LSTATMA1 β ActiveSpecification Comparison
| Parameter | IPB120N04S402ATMA1 | BSC019N04LSTATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.85 | $1.21 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS-T2 | β |
| FET Type | N-Channel, Enhancement Mode | β |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID, TC) | 120 A | β |
| Power Dissipation (PD, TC) | 158 W | β |
| RDS(on) (typ @ VGS=10 V) | 1.8 mΞ© | β |
| Package | PG-TO263-3 (D2PAK) | TDSON-8 (SuperSO8) 5x6 mm |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (2 + Tab) | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C | -55 C to +150 C |
| Maximum Junction Temperature | 175 Β°C | β |
| Gate Threshold Voltage (VGS(th), typ) | [DATA_NEEDED: gate threshold voltage] | β |
| Total Gate Charge (Qg, typ) | [DATA_NEEDED: total gate charge] | β |
| Avalanche Energy Rating | 100% Avalanche Tested | β |
| Moisture Sensitivity Level (MSL) | MSL1 (per JEDEC J-STD-020, up to 260 Β°C peak reflow) | β |
| Automotive Qualification | AEC-Q101 | β |
| RoHS Compliance | Green Product (RoHS compliant) | β |
| Technology | β | OptiMOS 5 (N-channel trench MOSFET) |
| Continuous Drain Current (ID, Tc=25C) | β | 161 A |
| Continuous Drain Current (ID, Ta=25C) | β | 28 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed ID limit] |
| On-Resistance RDS(on) max @ VGS=10V | β | 1.9 mOhm |
| On-Resistance RDS(on) max @ VGS=4.5V | β | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate Threshold Voltage VGS(th) typ | β | 1.7 V |
| Total Gate Charge Qg typ | β | 85 nC |
| Power Dissipation PD (Tc=25C) | β | 94 W |
| MSL Level | β | 1 (unlimited) |
| RoHS Status | β | Compliant |
| Lead-Free / Halogen-Free | β | Yes / Yes |
| Avalanche Rated | β | Yes |