IPB120N04S402ATMA1 vs BSC019N04LSTATMA1 Comparison

Detailed side-by-side comparison of IPB120N04S402ATMA1 by Infineon and BSC019N04LSTATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPB120N04S402ATMA1 BSC019N04LSTATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies —
Product Family OptiMOS-T2 —
FET Type N-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID, TC) 120 A —
Power Dissipation (PD, TC) 158 W —
RDS(on) (typ @ VGS=10 V) 1.8 mΩ —
Package PG-TO263-3 (D2PAK) TDSON-8 (SuperSO8) 5x6 mm
Mounting Type Surface Mount Surface Mount
Pin Count 3 (2 + Tab) —
Operating Temperature Range -55 °C to +175 °C -55 C to +150 C
Maximum Junction Temperature 175 °C —
Gate Threshold Voltage (VGS(th), typ) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge (Qg, typ) [DATA_NEEDED: total gate charge] —
Avalanche Energy Rating 100% Avalanche Tested —
Moisture Sensitivity Level (MSL) MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) —
Automotive Qualification AEC-Q101 —
RoHS Compliance Green Product (RoHS compliant) —
Technology — OptiMOS 5 (N-channel trench MOSFET)
Continuous Drain Current (ID, Tc=25C) — 161 A
Continuous Drain Current (ID, Ta=25C) — 28 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed ID limit]
On-Resistance RDS(on) max @ VGS=10V — 1.9 mOhm
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Gate Threshold Voltage VGS(th) typ — 1.7 V
Total Gate Charge Qg typ — 85 nC
Power Dissipation PD (Tc=25C) — 94 W
MSL Level — 1 (unlimited)
RoHS Status — Compliant
Lead-Free / Halogen-Free — Yes / Yes
Avalanche Rated — Yes

Datasheets & Resources

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