IPB120N04S402ATMA1 vs BSC019N04LSTATMA1 比較
詳細並排比較 IPB120N04S402ATMA1 由 Infineon 與 BSC019N04LSTATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPB120N04S402ATMA1 | BSC019N04LSTATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS-T2 | — |
| FET Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID, TC) | 120 A | — |
| Power Dissipation (PD, TC) | 158 W | — |
| RDS(on) (typ @ VGS=10 V) | 1.8 mΩ | — |
| 封裝 | PG-TO263-3 (D2PAK) | TDSON-8 (SuperSO8) 5x6 mm |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 3 (2 + Tab) | — |
| 工作溫度範圍 | -55 °C to +175 °C | -55 C to +150 C |
| Maximum Junction Temperature | 175 °C | — |
| Gate Threshold Voltage (VGS(th), typ) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg, typ) | [DATA_NEEDED: total gate charge] | — |
| Avalanche Energy Rating | 100% Avalanche Tested | — |
| 濕度敏感等級 (MSL) | MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) | — |
| Automotive Qualification | AEC-Q101 | — |
| RoHS Compliance | Green Product (RoHS compliant) | — |
| Technology | — | OptiMOS 5 (N-channel trench MOSFET) |
| Continuous Drain Current (ID, Tc=25C) | — | 161 A |
| Continuous Drain Current (ID, Ta=25C) | — | 28 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed ID limit] |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.9 mOhm |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate Threshold Voltage VGS(th) typ | — | 1.7 V |
| Total Gate Charge Qg typ | — | 85 nC |
| Power Dissipation PD (Tc=25C) | — | 94 W |
| MSL 等級 | — | 1 (unlimited) |
| RoHS 狀態 | — | Compliant |
| Lead-Free / Halogen-Free | — | Yes / Yes |
| Avalanche Rated | — | Yes |