IPB120N04S402ATMA1 vs IPD50N04S408ATMA1 Comparison
Detailed side-by-side comparison of IPB120N04S402ATMA1 by Infineon and IPD50N04S408ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB120N04S402ATMA1 - 40V 120A OptiMOS-T2 N-FET D2PAK | Infineon
IPB120N04S402ATMA1 β Active
Specification Comparison
| Parameter | IPB120N04S402ATMA1 | IPD50N04S408ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.85 | $0.69 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-T2 | OptiMOS-T2 |
| FET Type | N-Channel, Enhancement Mode | β |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID, TC) | 120 A | β |
| Power Dissipation (PD, TC) | 158 W | β |
| RDS(on) (typ @ VGS=10 V) | 1.8 mΞ© | β |
| Package | PG-TO263-3 (D2PAK) | PG-TO252-3-313 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (2 + Tab) | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C | -55 Β°C to +175 Β°C |
| Maximum Junction Temperature | 175 Β°C | β |
| Gate Threshold Voltage (VGS(th), typ) | [DATA_NEEDED: gate threshold voltage] | β |
| Total Gate Charge (Qg, typ) | [DATA_NEEDED: total gate charge] | β |
| Avalanche Energy Rating | 100% Avalanche Tested | β |
| Moisture Sensitivity Level (MSL) | MSL1 (per JEDEC J-STD-020, up to 260 Β°C peak reflow) | β |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| RoHS Compliance | Green Product (RoHS compliant) | β |
| Polarity | β | N-Channel |
| Mode | β | Enhancement-mode |
| Drain-Source Voltage (V DS) | β | 40 V |
| Continuous Drain Current (I D, Tc) | β | 50 A |
| Power Dissipation (P D, Tc) | β | 46 W |
| MSL Level | β | MSL1 (260 Β°C peak reflow) |
| Avalanche Tested | β | 100 % Avalanche tested |
| Green Package (RoHS) | β | RoHS compliant |
| Gate Threshold Voltage (V GS(th)) | β | [DATA_NEEDED: V GS(th) typical] |
| On-State Resistance (R DS(on)) | β | [DATA_NEEDED: R DS(on) at V GS = 10 V] |
| Total Gate Charge (Q G) | β | [DATA_NEEDED: Q G typical] |