IPB120N04S402ATMA1 vs IPD50N04S408ATMA1 Perbandingan

Perbandingan bersamaan detil IPB120N04S402ATMA1 dari Infineon dan IPD50N04S408ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPB120N04S402ATMA1 IPD50N04S408ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-T2 OptiMOS-T2
FET Type N-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, TC) 120 A —
Power Dissipation (PD, TC) 158 W —
RDS(on) (typ @ VGS=10 V) 1.8 mΩ —
Paket PG-TO263-3 (D2PAK) PG-TO252-3-313 (DPAK)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 (2 + Tab) —
Rentang Suhu Kerja -55 °C to +175 °C -55 °C to +175 °C
Maximum Junction Temperature 175 °C —
Gate Threshold Voltage (VGS(th), typ) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge (Qg, typ) [DATA_NEEDED: total gate charge] —
Avalanche Energy Rating 100% Avalanche Tested —
Tingkat Sensitivitas Kekeringan (MSL) MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) —
Automotive Qualification AEC-Q101 AEC-Q101
RoHS Compliance Green Product (RoHS compliant) —
Polarity — N-Channel
Mode — Enhancement-mode
Drain-Source Voltage (V DS) — 40 V
Continuous Drain Current (I D, Tc) — 50 A
Power Dissipation (P D, Tc) — 46 W
Level MSL — MSL1 (260 °C peak reflow)
Avalanche Tested — 100 % Avalanche tested
Green Package (RoHS) — RoHS compliant
Gate Threshold Voltage (V GS(th)) — [DATA_NEEDED: V GS(th) typical]
On-State Resistance (R DS(on)) — [DATA_NEEDED: R DS(on) at V GS = 10 V]
Total Gate Charge (Q G) — [DATA_NEEDED: Q G typical]

Spek dan Sumber

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