IPC100N04S51R7ATMA1 vs IAUC60N04S6L030HATMA1 Comparison
Detailed side-by-side comparison of IPC100N04S51R7ATMA1 by Infineon and IAUC60N04S6L030HATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPC100N04S51R7ATMA1
IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon
IPC100N04S51R7ATMA1 β ActiveInfineon
IAUC60N04S6L030HATMA1
IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
IAUC60N04S6L030HATMA1 β ActiveSpecification Comparison
| Parameter | IPC100N04S51R7ATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.82 | $0.94 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS-5 | β |
| Transistor Type | N-Channel MOSFET, Enhancement Mode | β |
| Drain-Source Voltage VDS | 40 V | β |
| Continuous Drain Current ID | 100 A (at TC) | β |
| Pulsed Drain Current IDM | [DATA_NEEDED: pulsed drain current] | β |
| Gate-Source Voltage VGS | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) value] | β |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | β |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | β |
| Power Dissipation PD | 115 W (at TC) | β |
| Thermal Resistance RthJC | 1.3 K/W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | -55 C to +175 C |
| Package | PG-TDSON-8-34 (SS08 leadless) | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (260 Β°C peak reflow) | 1 (per JEDEC J-STD-020) |
| AEC-Q101 Qualified | Yes | β |
| Avalanche Tested | 100% tested | β |
| RoHS Status | Compliant (Green Product) | Compliant |
| Built-in Body Diode | Yes | β |
| Part Series | β | OptiMOS 6 |
| Configuration | β | Half-Bridge (2 N-Channel) |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at TJ | β | 60 A |
| On-Resistance R_DS(on) at VGS=10V | β | 3.0 mOhm (typical) |
| Total Gate Charge (Qg) at VGS=10V | β | 35 nC |
| Output Capacitance (Coss) | β | 2.128 nF |
| Reverse Transfer Capacitance (Crss) | β | 596 pF |
| Gate Threshold Voltage (VGS(th)) | β | 2 V |
| Maximum Power Dissipation (PD) at TC | β | 75 W |
| Automotive Qualification | β | AEC-Q101 (per part number suffix) |