IPC100N04S51R7ATMA1 vs IAUC60N04S6L030HATMA1 对比
详细并排对比 IPC100N04S51R7ATMA1 出自 Infineon 和 IAUC60N04S6L030HATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPC100N04S51R7ATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.82 | $0.94 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS-5 | — |
| 晶体管类型 | N-Channel MOSFET, Enhancement Mode | — |
| Drain-Source Voltage VDS | 40 V | — |
| Continuous Drain Current ID | 100 A (at TC) | — |
| Pulsed Drain Current IDM | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage VGS | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) value] | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation PD | 115 W (at TC) | — |
| Thermal Resistance RthJC | 1.3 K/W | — |
| 工作结温 | -55 °C to +175 °C | -55 C to +175 C |
| 封装 | PG-TDSON-8-34 (SS08 leadless) | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | MSL1 (260 °C peak reflow) | 1 (per JEDEC J-STD-020) |
| AEC-Q101 Qualified | Yes | — |
| Avalanche Tested | 100% tested | — |
| RoHS 状态 | Compliant (Green Product) | Compliant |
| Built-in Body Diode | Yes | — |
| Part Series | — | OptiMOS 6 |
| Configuration | — | Half-Bridge (2 N-Channel) |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TJ | — | 60 A |
| On-Resistance R_DS(on) at VGS=10V | — | 3.0 mOhm (typical) |
| Total Gate Charge (Qg) at VGS=10V | — | 35 nC |
| Output Capacitance (Coss) | — | 2.128 nF |
| Reverse Transfer Capacitance (Crss) | — | 596 pF |
| Gate Threshold Voltage (VGS(th)) | — | 2 V |
| Maximum Power Dissipation (PD) at TC | — | 75 W |
| Automotive Qualification | — | AEC-Q101 (per part number suffix) |