IPC100N04S51R7ATMA1 vs IAUC60N04S6L030HATMA1 Comparação
Comparação detalhada lado a lado de IPC100N04S51R7ATMA1 por Infineon e IAUC60N04S6L030HATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
IAUC60N04S6L030HATMA1 ✓ AtivoComparação de especificações
| Parâmetro | IPC100N04S51R7ATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,82 | $0,94 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS-5 | — |
| Tipo de transistor | N-Channel MOSFET, Enhancement Mode | — |
| Drain-Source Voltage VDS | 40 V | — |
| Continuous Drain Current ID | 100 A (at TC) | — |
| Pulsed Drain Current IDM | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage VGS | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) value] | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation PD | 115 W (at TC) | — |
| Thermal Resistance RthJC | 1.3 K/W | — |
| Temperatura de junção de operação | -55 °C to +175 °C | -55 C to +175 C |
| Encapsulamento | PG-TDSON-8-34 (SS08 leadless) | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Nível MSL | MSL1 (260 °C peak reflow) | 1 (per JEDEC J-STD-020) |
| AEC-Q101 Qualified | Yes | — |
| Avalanche Tested | 100% tested | — |
| Status RoHS | Compliant (Green Product) | Compliant |
| Built-in Body Diode | Yes | — |
| Part Series | — | OptiMOS 6 |
| Configuration | — | Half-Bridge (2 N-Channel) |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TJ | — | 60 A |
| On-Resistance R_DS(on) at VGS=10V | — | 3.0 mOhm (typical) |
| Total Gate Charge (Qg) at VGS=10V | — | 35 nC |
| Output Capacitance (Coss) | — | 2.128 nF |
| Reverse Transfer Capacitance (Crss) | — | 596 pF |
| Gate Threshold Voltage (VGS(th)) | — | 2 V |
| Maximum Power Dissipation (PD) at TC | — | 75 W |
| Automotive Qualification | — | AEC-Q101 (per part number suffix) |