IPC90N04S5L3R3ATMA1 vs BSC0993NDATMA1 Comparison

Detailed side-by-side comparison of IPC90N04S5L3R3ATMA1 by Infineon and BSC0993NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPC90N04S5L3R3ATMA1 BSC0993NDATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 40V —
FET Type N-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TC=25°C 90 A —
On-Resistance RDS(on) max at VGS=10V 3.3 mΩ —
On-Resistance RDS(on) at VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage VGS(th) 1.7 V to 2.7 V (logic level) —
Total Power Dissipation (TC=25°C) 62 W —
Operating Junction Temperature -55°C to +175°C —
Storage Temperature Range [DATA_NEEDED: storage temp range] —
Package PG-TDSON-8-34 (TDSON-8) PG-TISON-8
Mounting Type Surface Mount Surface Mount
MSL Moisture Sensitivity MSL1 (per JEDEC J-STD-020) —
Peak Reflow Temperature 260°C —
Qualification AEC-Q101 automotive qualified —
Avalanche Tested 100% (production-level) —
RoHS Compliance Compliant (Green Product) —
Product Series — OptiMOS 5 30V
Configuration — Dual N-Channel (Array)
Drain-Source Voltage (Vds) — 30 V
Continuous Drain Current (Id) @ Ta — 17 A
Technology — OptiMOS 5 trench MOSFET
Channel Mode — Enhancement
Operating Temperature Range — -55C to +150C (junction)
ESD Protection — Yes (integrated)
MSL Level — [DATA_NEEDED: MSL level]
RoHS Status — Compliant
Lead-Free — Yes
Rds(on) max @ Vgs=10V — [DATA_NEEDED: Rds(on) value]
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) value]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg value]

Datasheets & Resources

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