IPC90N04S5L3R3ATMA1 vs BSC0993NDATMA1 Perbandingan

Perbandingan bersamaan detil IPC90N04S5L3R3ATMA1 dari Infineon dan BSC0993NDATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPC90N04S5L3R3ATMA1 BSC0993NDATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 40V —
FET Type N-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TC=25°C 90 A —
On-Resistance RDS(on) max at VGS=10V 3.3 mΩ —
On-Resistance RDS(on) at VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage VGS(th) 1.7 V to 2.7 V (logic level) —
Total Power Dissipation (TC=25°C) 62 W —
Suhu Hubung Kerja -55°C to +175°C —
Storage Temperature Range [DATA_NEEDED: storage temp range] —
Paket PG-TDSON-8-34 (TDSON-8) PG-TISON-8
Tipe Mounting Surface Mount Surface Mount
MSL Moisture Sensitivity MSL1 (per JEDEC J-STD-020) —
Peak Reflow Temperature 260°C —
Qualification AEC-Q101 automotive qualified —
Avalanche Tested 100% (production-level) —
RoHS Compliance Compliant (Green Product) —
Product Series — OptiMOS 5 30V
Configuration — Dual N-Channel (Array)
Drain-Source Voltage (Vds) — 30 V
Continuous Drain Current (Id) @ Ta — 17 A
Technology — OptiMOS 5 trench MOSFET
Channel Mode — Enhancement
Rentang Suhu Kerja — -55C to +150C (junction)
ESD Protection — Yes (integrated)
Level MSL — [DATA_NEEDED: MSL level]
Status RoHS — Compliant
Lead-Free — Yes
Rds(on) max @ Vgs=10V — [DATA_NEEDED: Rds(on) value]
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) value]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg value]

Spek dan Sumber

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