IPC90N04S5L3R3ATMA1 vs IQE220N15NM5CGSCATMA1 Comparison
Detailed side-by-side comparison of IPC90N04S5L3R3ATMA1 by Infineon and IQE220N15NM5CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPC90N04S5L3R3ATMA1
IPC90N04S5L3R3ATMA1 - 40V 90A OptiMOS N-Channel MOSFET | Infineon
IPC90N04S5L3R3ATMA1 β ActiveInfineon
IQE220N15NM5CGSCATMA1
IQE220N15NM5CGSCATMA1 - 150V 44A OptiMOS 5 N-MOSFET | Infineon
IQE220N15NM5CGSCATMA1 β ActiveSpecification Comparison
| Parameter | IPC90N04S5L3R3ATMA1 | IQE220N15NM5CGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.96 | $2.18 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 40V | β |
| FET Type | N-Channel, Enhancement Mode | N-Channel |
| Drain-Source Voltage (VDS) | 40 V | 150 V |
| Continuous Drain Current (ID) at TC=25Β°C | 90 A | β |
| On-Resistance RDS(on) max at VGS=10V | 3.3 mΞ© | β |
| On-Resistance RDS(on) at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Gate Threshold Voltage VGS(th) | 1.7 V to 2.7 V (logic level) | β |
| Total Power Dissipation (TC=25Β°C) | 62 W | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | β |
| Storage Temperature Range | [DATA_NEEDED: storage temp range] | β |
| Package | PG-TDSON-8-34 (TDSON-8) | PG-WHTFN-9 (Source-Down) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Moisture Sensitivity | MSL1 (per JEDEC J-STD-020) | β |
| Peak Reflow Temperature | 260Β°C | β |
| Qualification | AEC-Q101 automotive qualified | β |
| Avalanche Tested | 100% (production-level) | β |
| RoHS Compliance | Compliant (Green Product) | β |
| Series | β | OptiMOS 5 |
| Continuous Drain Current at Ta (ID) | β | 7 A |
| Continuous Drain Current at Tc (ID) | β | 44 A |
| Power Dissipation at Ta (PD) | β | 2.5 W |
| Power Dissipation at Tc (PD) | β | 100 W |
| On-Resistance (RDS(on)) | β | 22 milliohm (max) |
| Gate Threshold Voltage (VGS(th)) | β | 4.6 V |
| Technology | β | OptiMOS 5, Source-Down |
| Operating Temperature Range | β | -55C to +150C (junction) |
| RoHS Status | β | Compliant |