IPC90N04S5L3R3ATMA1 vs IQE220N15NM5CGSCATMA1 比較

詳細並排比較 IPC90N04S5L3R3ATMA1 由 Infineon 與 IQE220N15NM5CGSCATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPC90N04S5L3R3ATMA1 IPC90N04S5L3R3ATMA1 - 40V 90A OptiMOS N-Channel MOSFET | Infineon

IPC90N04S5L3R3ATMA1 - 40V 90A OptiMOS N-Channel MOSFET | Infineon

IPC90N04S5L3R3ATMA1 ✓ 啟用中
Infineon
IQE220N15NM5CGSCATMA1 IQE220N15NM5CGSCATMA1 - 150V 44A OptiMOS 5 N-MOSFET | Infineon

IQE220N15NM5CGSCATMA1 - 150V 44A OptiMOS 5 N-MOSFET | Infineon

IQE220N15NM5CGSCATMA1 ✓ 啟用中

規格比較

參數 IPC90N04S5L3R3ATMA1 IQE220N15NM5CGSCATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 40V —
FET Type N-Channel, Enhancement Mode N-Channel
Drain-Source Voltage (VDS) 40 V 150 V
Continuous Drain Current (ID) at TC=25°C 90 A —
On-Resistance RDS(on) max at VGS=10V 3.3 mΩ —
On-Resistance RDS(on) at VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage VGS(th) 1.7 V to 2.7 V (logic level) —
Total Power Dissipation (TC=25°C) 62 W —
工作接面溫度 -55°C to +175°C —
Storage Temperature Range [DATA_NEEDED: storage temp range] —
封裝 PG-TDSON-8-34 (TDSON-8) PG-WHTFN-9 (Source-Down)
安裝類型 Surface Mount Surface Mount
MSL Moisture Sensitivity MSL1 (per JEDEC J-STD-020) —
Peak Reflow Temperature 260°C —
Qualification AEC-Q101 automotive qualified —
Avalanche Tested 100% (production-level) —
RoHS Compliance Compliant (Green Product) —
Series — OptiMOS 5
Continuous Drain Current at Ta (ID) — 7 A
Continuous Drain Current at Tc (ID) — 44 A
Power Dissipation at Ta (PD) — 2.5 W
Power Dissipation at Tc (PD) — 100 W
On-Resistance (RDS(on)) — 22 milliohm (max)
Gate Threshold Voltage (VGS(th)) — 4.6 V
Technology — OptiMOS 5, Source-Down
工作溫度範圍 — -55C to +150C (junction)
RoHS 狀態 — Compliant

資料表與資源

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