IPD038N06N3GATMA1 vs IPD50N06S409ATMA2 Comparison

Detailed side-by-side comparison of IPD038N06N3GATMA1 by Infineon and IPD50N06S409ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD038N06N3GATMA1 IPD038N06N3GATMA1 - 60V 90A OptiMOS N-Channel MOSFET | Infineon

IPD038N06N3GATMA1 - 60V 90A OptiMOS N-Channel MOSFET | Infineon

IPD038N06N3GATMA1 βœ“ Active

Specification Comparison

Parameter IPD038N06N3GATMA1 IPD50N06S409ATMA2
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.65 $0.49
FET Type N-Channel MOSFET β€”
Series OptiMOS 60V β€”
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID) at Tc 90 A 50 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
Gate-Source Voltage (VGS) Β±20 V β€”
Gate Threshold Voltage (VGS(th)) 4 V (typ) [DATA_NEEDED: VGS(th) typical]
On-Resistance (RDS(on)) at VGS=10V 3.8 mΞ© β€”
Total Power Dissipation (PD) at Tc 188 W β€”
Operating Temperature Range [DATA_NEEDED: operating temperature range] β€”
Package PG-TO252-3 (DPAK) PG-TO252-3-11 (DPAK)
Mounting Type Surface Mount Surface Mount
MSL Level 1 β€”
RoHS Status Compliant Compliant
Halogen-Free Yes β€”
Lead-Free Yes β€”
Technology OptiMOS trench MOSFET N-Channel MOSFET (OptiMOS)
Polarity N-Channel β€”
On-Resistance R<sub>DS(on)</sub> max at VGS=10V β€” 9 mΞ©
Gate-Source Voltage (VGS) max β€” [DATA_NEEDED: VGS max rating]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg typical]
Power Dissipation (Pd) at Tc β€” 71 W
Operating Junction Temperature β€” -55 Β°C to +175 Β°C
Pin Count β€” 3 (2 + Tab)
Automotive Qualification β€” AEC-Q101
Lead-Free / Halogen-Free β€” [DATA_NEEDED]

Datasheets & Resources

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