IPD038N06N3GATMA1 vs IPD65R380E6ATMA1 Comparison
Detailed side-by-side comparison of IPD038N06N3GATMA1 by Infineon and IPD65R380E6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD038N06N3GATMA1 | IPD65R380E6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| FET Type | N-Channel MOSFET | — |
| Series | OptiMOS 60V | CoolMOS™ E6 |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Tc | 90 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 4 V (typ) | — |
| On-Resistance (RDS(on)) at VGS=10V | 3.8 mΩ | — |
| Total Power Dissipation (PD) at Tc | 188 W | — |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | -55 °C to +150 °C |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK), surface mount |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 | 1 |
| RoHS Status | Compliant | Compliant |
| Halogen Free | Yes | — |
| Lead-Free | Yes | — |
| Technology | OptiMOS trench MOSFET | Superjunction (CoolMOS™) |
| Polarity | N-Channel | — |
| Manufacturer | — | Infineon Technologies |
| Transistor Type | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | — | 650 V |
| Continuous Drain Current (I_D) at T_C | — | 10.6 A |
| R_DS(on) max at V_GS=10V | — | 380 mΩ |
| R_DS(on) test conditions | — | 3.2 A, 10 V |
| Gate-Source Voltage (V_GS) max | — | ±20 V |
| Gate Threshold Voltage (V_GS(th)) | — | 3.5 V typ |
| Gate Charge (Q_G) | — | 39 nC at 10 V |
| Input Capacitance (C_iss) | — | 710 pF at 100 V |
| Power Dissipation (P_D) at T_C | — | 83 W |