IPD038N06NF2SATMA1 - 60V 120A OptiMOS N-MOSFET | Infineon
MPN: IPD038N06NF2SATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.45 | $2.45 |
| 10 | $2.1 | $21.00 |
| 100 | $1.78 | $178.00 |
| 500 | $1.45 | $725.00 |
| 1,000 | $1.18 | $1,180.00 |
| 2,500 | $0.95 | $2,375.00 |
Drop-in alternatives for IPD038N06NF2SATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPD040N06NF2SATMA1
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IPD036N06L2G
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IPD038N06NF2S
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BSC050NE2LSATMA1
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View Datasheet →IPD082N10N3GATMA1
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View Datasheet →BSZ024N04LS6ATMA1
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View Datasheet →IPD038N06NF2SATMA1 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Technology | OptiMOS (Trench) |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at TC=25°C | 120 A |
| Continuous Drain Current (ID) at TA=25°C | 20 A |
| Gate-Source Voltage (VGS) max | ±20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | 3.85 mΩ max |
| Typical Gate Charge (Qg) at VGS=10V | 68 nC |
| Input Capacitance (Ciss) | 6700 pF |
| Output Capacitance (Coss) | 670 pF |
| Reverse Transfer Capacitance (Crss) | 43 pF |
| Power Dissipation (PD) at TA=25°C | 3 W |
| Power Dissipation (PD) at TC=25°C | 107 W |
| Operating Junction Temperature | -55°C to +175°C |
| Package | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| Channel Mode | Enhancement |
IPD038N06NF2SATMA1 Pin Configuration
| Pin 1 | Gate (G) — Gate drive input; standard ESD-protected MOSFET gate |
| Pin 2 | Drain (D) — Drain terminal, electrically tied to the metal mounting tab |
| Pin 3 | Source (S) — Source return; PCB Kelvin connection for gate-drive return |
| Pin TAB | Drain (D) — Metal tab / heatsink - internally connected to Pin 2 (Drain); isolate with thermal pad |
Safe Operating Area (DC, TC=25°C)
Typical Applications
IPD038N06NF2SATMA1 is suitable for 6 applications: Synchronous Rectification in 48V Telecom/Server DC-DC, High-Current Brushed DC Motor Drive, Battery Pack Protection / 48V Li-ion Disconnect Switch, Solar Inverter / MPPT Boost Converter, Automotive 12V-24V Load Switching / ECU Power, Hot-Swap / OR-ing Controller Power Stage.
Synchronous Rectification in 48V Telecom/Server DC-DC
The IPD038N06NF2SATMA1 is well-suited as a synchronous rectifier FET in 48V-to-low-voltage bus converters targeting telecom and server power supplies. With RDS(on) of 3.85 mΩ at VGS=10V, the conduction loss at 60A continuous is approximately 14W per FET, allowing air-cooled designs without an external heatsink on the DPAK tab. The 60V VDS rating provides comfortable margin above a 48V nominal bus with transient spikes to 56V. The 68nC typical Qg enables 200-500 kHz switching when paired with an Infineon EiceDRIVER gate driver, balancing efficiency and magnetics size. Compared with a planar MOSFET, the OptiMOS trench architecture cuts switching loss by ~30%.
Recommended
High-Current Brushed DC Motor Drive
For brushed DC motor drive H-bridges in 24V-48V battery-powered equipment such as power tools, e-bikes, and AGV traction motors, the IPD038N06NF2SATMA1 delivers the 120A peak current capability needed for startup and stall conditions. Its 3.85 mΩ RDS(on) at 10V gate drive reduces I²R loss in PWM low-side switching, improving thermal headroom in sealed enclosures. The 175°C maximum junction rating supports sustained operation under stalled-rotor conditions, while the DPAK footprint enables compact motor-controller PCB layouts. A 10kHz-25kHz PWM frequency is comfortable given the 68nC gate charge.
Recommended
Battery Pack Protection / 48V Li-ion Disconnect Switch
The IPD038N06NF2SATMA1 functions as a low-side disconnect FET in 48V lithium-ion battery packs (e-bikes, scooters, telecom backup). Its 3.85 mΩ RDS(on) keeps full-load conduction loss to 14W at 60A - manageable on a 4-layer FR4 PCB with 2-square-inch copper pour. The 60V VDS rating provides 25% margin above a fully-charged 48V Li-ion stack. The PG-TO252-3 (DPAK) package is the industry standard for pack-level protection FETs, simplifying qualification of safety-tested battery management systems. The N-channel structure pairs with a charge pump or bootstrap driver for full enhancement at low pack voltages.
Recommended
Solar Inverter / MPPT Boost Converter
In photovoltaic micro-inverters and MPPT boost converters operating from 30-50V PV panel input, the IPD038N06NF2SATMA1 serves as the boost switch or synchronous rectifier. Its 3.85 mΩ RDS(on) at 10V gate drive yields >97% efficiency in a 2kW boost stage. The 120A ID rating supports paralleled PV string currents up to 60A continuous, while the 60V VDS comfortably exceeds 50V open-circuit panel voltage with cold-weather headroom. The OptiMOS trench technology's low Qg × RDS(on) FOM is optimized for 100-200 kHz hard-switched boost topologies common in residential solar.
Recommended
Automotive 12V-24V Load Switching / ECU Power
Although the IPD038N06NF2SATMA1 itself is not AEC-Q100 qualified, the same Infineon die family is offered as an automotive grade (e.g., IPD038N06NF2S - automotive variant). It is widely used in non-safety automotive 12V/24V body-control ECUs for high-current load switching - heated seats, headlamp ballasts, cooling fans. Its 120A pulsed rating handles inrush from capacitive loads and incandescent bulbs. The 60V VDS is far above 24V automotive transient suppression, providing robust margin against load-dump events. The DPAK package meets automotive SMT reliability standards for under-hood and cabin ECUs.
Recommended
Hot-Swap / OR-ing Controller Power Stage
In telecom -48V distribution and server 12V bus hot-swap / OR-ing applications, the IPD038N06NF2SATMA1 acts as the main disconnect MOSFET carrying full-load current up to 60A continuous. Its 3.85 mΩ RDS(on) and 120A ID rating minimize both steady-state conduction loss and transient inrush stress. The 60V VDS safely blocks the -48V rail plus transient excursions. The DPAK footprint enables compact hot-swap controller PCB layouts and is thermally robust enough for 3W continuous dissipation with a small copper pour. Infineon's eFuse or hot-swap controller ICs directly drive this part.
Recommended
Recommended Products Summary
Engineering reference data for IPD038N06NF2SATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD040N06NF2SATMA1 | IPD036N06L2G | IPD038N06NF2S | BSC050NE2LSATMA1 | IPD082N10N3GATMA1 | BSZ024N04LS6ATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same |
| Drain-Source Voltage (VDS) max | 60 V | 60 V | 60 V | 60 V | 60 V | 100 V | 40 V |
| Continuous Drain Current (ID) at TC=25°C | 120 A | [DATA_NEEDED] | [DATA_NEEDED] | 120 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| RDS(on) max at VGS=10V | 3.85 mΩ | 4.0 mΩ | 3.6 mΩ | 3.85 mΩ | 5.0 mΩ | 8.2 mΩ | 2.4 mΩ |
| Typical Gate Charge (Qg) at VGS=10V | 68 nC | [DATA_NEEDED] | [DATA_NEEDED] | 68 nC | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Power Dissipation (PD) at TC=25°C | 107 W | [DATA_NEEDED] | [DATA_NEEDED] | 107 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Operating Junction Temperature | -55°C to +175°C | -55°C to +175°C | -55°C to +175°C | -55°C to +175°C | -55°C to +175°C | -55°C to +175°C | -55°C to +175°C |
Key Differentiators
- Lowest RDS(on) in Infineon's 60V OptiMOS N-channel family (vs BSC050NE2LSATMA1)
- Tape-and-reel packaging variant (vs IPD038N06NF2S)
- Higher VDS rating than low-voltage 40V alternatives (vs BSZ024N04LS6ATMA1)
Design Notes
Estimated: At ID=60A and RDS(on)=3.85 mΩ (TJ=25°C spec), conduction loss is P = I² × R = 60² × 0.00385 ≈ 13.9W per FET. The PG-TO252-3 (DPAK) package has a typical RθJA of ~40°C/W on a 1-square-inch copper pour. With 13.9W dissipation, the junction rises approximately 555°C above ambient - clearly exceeding the 175°C limit, so this part absolutely requires either a smaller continuous current or an external heatsink bolted to the tab. For continuous 60A operation, either reduce current per phase (parallel multiple FETs at ~20A each) or bolt the tab to a chassis heatsink. Always check RθJC (typically ~0.8°C/W) and design against TC_max.
Use a 2-4 ounce copper pour on the drain tab with multiple thermal vias to the opposite PCB layer for the PG-TO252-3 (DPAK) DPAK footprint. Source pin copper should be wide and short to minimize source inductance; the gate-drive return should be routed directly adjacent to the source pin (Kelvin connection) to avoid common-source inductance that slows turn-off and causes ringing. Place the gate-driver IC within 10mm of the gate pin to minimize gate-loop inductance. Per Infineon's OptiMOS application note, an RC snubber (10Ω + 1nF) from drain to source is recommended at VDS > 40V to suppress voltage overshoot from parasitic inductance.
Three pitfalls to avoid: (1) Driving the gate with only 4.5V - RDS(on) degrades by ~1.5-2x versus 10V spec, increasing conduction loss disproportionately; always use a true 10V gate driver or bootstrap supply. (2) Exceeding VGS(max) = ±20V - gate-oxide breakdown is permanent; TVS clamp the gate if any chance of transients. (3) Mounting the tab without thermal isolation - the drain tab is electrically HOT at switching frequency, so use a silicone thermal pad with sufficient dielectric withstand (typically 4kV minimum) when bolted to a chassis. Also: do not exceed pulsed drain current (SOA) at low VDS values - thermal runaway can occur in linear-mode operation.
Compliance Information
RoHS compliant per Infineon product page. Not AEC-Q100 qualified - automotive designers should select the AEC-Q100 qualified automotive grade variant (separate part number) for safety-critical automotive applications. Lead-free (Pb-free) reflow compatible per JEDEC J-STD-020.
