IPD135N03LGATMA1 - 30V 30A N-Ch OptiMOS MOSFET | Infineon
MPN: IPD135N03LGATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.62 | $0.62 |
| 10 | $0.54 | $5.40 |
| 100 | $0.41 | $41.00 |
| 500 | $0.33 | $165.00 |
| 1,000 | $0.27 | $270.00 |
| 3,000 | $0.22 | $660.00 |
Drop-in alternatives for IPD135N03LGATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPD060N03LGATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
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View Datasheet →BSC0906NSATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.48 / Unit
View Datasheet →BSC019N04NSGATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.58 / Unit
View Datasheet →IRFR120NTRPBF
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.26 / Unit
View Datasheet →IRFZ44NPBF
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
IPD135N03LGATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) | 30 A (Tc) |
| Power Dissipation (PD) | 31 W (Tc) |
| Package / Case | PG-TO252-3 (DPAK), Surface Mount |
| Gate Charge (Qg) | Ultra-low (per OptiMOS™ family spec) |
| Output Charge (Qoss) | Ultra-low (per OptiMOS™ family spec) |
| Operating Temperature Range | -55°C to +175°C (TJ max typical for OptiMOS) |
| Mounting Type | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant |
| Lead-Free Finish | Yes |
| Qualification | Industrial (Infineon OptiMOS™ standard grade) |
IPD135N03LGATMA1 Pin Configuration
| Pin 1 | GATE — Gate control input (MOSFET gate terminal) |
| Pin 2 | DRAIN — Drain terminal (internally connected to the tab/thermal pad on pin 4) |
| Pin 3 | SOURCE — Source terminal |
| Pin 4 | TAB/DRAIN — Drain and thermal pad on underside of package for PCB copper soldering |
Safe Operating Area (DC, Tc=25°C)
Typical Applications
IPD135N03LGATMA1 is suitable for 6 applications: Server VRM and Point-of-Load DC-DC Converters, Telecom Brick Converters and 12V Distribution, Industrial Motor-Drive Low-Side Switches, Battery-Protection and Load-Switch Circuits, USB-PD and Type-C Power Delivery Output Stages, Hot-Swap and OR-ing in 12V Server Bays.
Server VRM and Point-of-Load DC-DC Converters
The IPD135N03LGATMA1 fits server VRM and POL converter applications because its ultra-low gate charge and output charge (an OptiMOS™ hallmark) directly reduce switching losses at the 300 kHz–1 MHz operating frequencies typical of modern buck converters. Its 30 A continuous drain rating comfortably supports the 20–25 A load steps found in high-current CPU/GPU rails. Engineers typically use it as the low-side synchronous rectifier paired with a dedicated high-side MOSFET and a digital PWM controller. The 30 V VDS rating gives ample transient margin above 12 V nominal bus, and the DPAK footprint enables dense, double-sided cooling on the motherboard.
Recommended
Telecom Brick Converters and 12V Distribution
In telecom brick converters and 48V-to-12V intermediate bus architectures, the IPD135N03LGATMA1 serves as an efficient OR-ing or hot-swap MOSFET where its 30 V rating and 30 A capability comfortably handle 12 V distribution rails. The ultra-low RDS(on) minimizes voltage drop and conduction loss, which is critical when hundreds of amps flow through bus rails in centralized datacom equipment. Designers benefit from the device's compact DPAK footprint, which simplifies layout for high-density front-end power shelves. Pairing it with a dedicated hot-swap controller (such as the LTC4282 family) provides inrush-current limiting and fault isolation essential to telecom-grade reliability.
Recommended
Industrial Motor-Drive Low-Side Switches
The IPD135N03LGATMA1 is well suited to industrial motor-drive low-side switching applications such as brushed-DC motor control and the low-side stage of three-phase inverter legs below 30 V. Its 30 A continuous rating and 31 W power dissipation in DPAK allow designers to drive motors up to several hundred watts without forced-air cooling, provided the PCB copper-pour area follows Infineon's reference thermal layout. The OptiMOS™ process delivers the rugged avalanche energy and short-circuit withstand capability that industrial designs demand. Engineers typically pair it with a gate-driver IC from the EiceDRIVER™ family for fast, Miller-clamped switching.
Recommended
Battery-Protection and Load-Switch Circuits
Battery-powered systems using 1S–3S Li-ion cells (nominally up to 12.6 V) benefit from the IPD135N03LGATMA1's 30 V rating as a load-switch or reverse-polarity protection element. The ultra-low RDS(on) reduces voltage drop across the protection MOSFET, preserving battery runtime in portable applications. The DPAK footprint handles the 30 A continuous current needed for high-power tools, e-bike controllers, and UPS modules. Designers typically add a simple gate-bias network and TVS clamp to protect the gate from ESD and inductive transients during load switching.
Recommended
USB-PD and Type-C Power Delivery Output Stages
In USB-PD and Type-C adapter output stages where the downstream rail is 5V, 9V, 15V, or 20V (always below 30V), the IPD135N03LGATMA1 functions as an efficient synchronous-rectifier MOSFET in buck or buck-boost converters. Its ultra-low Qg enables operation at the 200–500 kHz switching frequencies used in compact wall adapters. The DPAK package's small footprint fits slim-form-factor designs, and the 30A rating gives substantial thermal margin for 60–100W adapters. Pairing with a USB-PD controller such as the Infineon EZ-PD™ family yields a high-efficiency, high-power-density Type-C solution.
Recommended
Hot-Swap and OR-ing in 12V Server Bays
The IPD135N03LGATMA1 supports 12V hot-swap and OR-ing applications inside server bays where each blade draws tens of amps from a shared distribution bus. Its low RDS(on) minimizes both conduction loss and the heat that must be dissipated in the blade chassis. The 30 V VDS rating tolerates the inductive transients produced when a faulty card is hot-removed, and the DPAK footprint handles the surge currents during hot-plug events. Designers typically combine the MOSFET with a hot-swap controller that monitors current and temperature, providing programmable inrush-current limiting and fast fault isolation for high-availability systems.
Recommended
Recommended Products Summary
Engineering reference data for IPD135N03LGATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD060N03LGATMA1 | BSC0906NSATMA1 | BSC019N04NSGATMA1 | IRFR120NTRPBF |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same |
| Drain-Source Voltage (VDS) | 30 V | 30 V | 30 V | 40 V | 100 V |
| Continuous Drain Current (ID, Tc) | 30 A | 30 A | 30 A | 30 A | 9.4 A (lower-rated) |
| On-State Resistance (RDS(on)) | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Gate Charge (Qg) | Ultra-low (OptiMOS™) | Ultra-low (OptiMOS™) | Ultra-low (OptiMOS™) | Low (OptiMOS™) | Moderate (HEXFET) |
| Power Dissipation (PD, Tc) | 31 W | 31 W | 31 W | 31 W | 48 W |
| Technology / Family | OptiMOS™ (Infineon) | OptiMOS™ (Infineon) | OptiMOS™ (Infineon) | OptiMOS™ (Infineon) | HEXFET (Infineon) |
| RoHS / Lead-Free | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes |
Key Differentiators
- Ultra-low gate and output charge for high-frequency efficiency (vs IRFR120NTRPBF)
- Right-sized 30V VDS with 30A continuous current (vs BSC019N04NSGATMA1)
- Standard DPAK footprint for layout portability (vs BSC0906NSATMA1)
Design Notes
The PG-TO252-3 (DPAK) package relies heavily on the PCB copper area for heat removal. Estimated: with the Infineon recommended 1 oz copper pad of approximately 50 mm × 50 mm on a 1.6 mm FR-4 board, the steady-state thermal resistance junction-to-ambient is roughly 50 °C/W, giving a junction-temperature rise of about 50 °C at 1 W dissipation. At the maximum 31 W rating, the junction will reach its 175 °C limit; in practice, keep continuous dissipation below 5 W without forced-air cooling. Use multiple thermal vias under the tab for improved heat transfer.
Place the gate-drive loop as small as possible to minimize parasitic inductance. Keep the gate-trace width below 0.5 mm to limit gate-loop area, and route the gate return path directly back to the source kelvin connection if available. Use a 10 Ω–100 Ω gate-source resistor (often placed close to the MOSFET gate) to dampen ringing and prevent inadvertent turn-on from Miller current during high dv/dt transitions.
For synchronous-rectifier placement, position the low-side MOSFET as close as possible to the controller's SW node and high-side MOSFET. The source-kelvin pad (if present) should be tied to the gate-driver ground reference, not directly to the power ground, to avoid ground bounce coupling into the gate-drive loop. Use a wide, short drain copper pour for thermal spreading and to carry the high peak currents during switching.
Avoid exceeding the 30V VDS rating: even short inductive spikes during switching can punch through the device. Add a snubber or TVS clamp across drain-source if the bus is inductive. Also, never drive the gate above the absolute maximum ±20V VGS rating — use a gate-driver IC with proper rail (typically 10V) rather than a microcontroller GPIO directly. Lastly, do not parallel multiple MOSFETs without proper gate-balance resistors; otherwise current imbalance can cause thermal runaway.
Fast switching edges from OptiMOS™ devices can radiate EMI if not properly damped. Use a small RC snubber (e.g., 10 Ω + 1 nF) across drain-source when the switching loop inductance exceeds 10 nH. A ferrite bead on the gate-drive path can further dampen high-frequency ringing. For EMI-sensitive applications, consider adding a common-mode choke on the input/output power lines and ensuring the drain copper pour does not form a loop antenna.
Compliance Information
RoHS compliant and lead-free per Infineon product page. Standard industrial grade; AEC-Q100 automotive variants are NOT in this part number — consult the IPD-series automotive datasheets for qualified options. Halogen-free status not explicitly stated in the verified data — set to 'unknown' per Data Authenticity Rule 1.
