IPD30N06S2L13ATMA4 vs IPD30N10S3L34ATMA1 Comparison
Detailed side-by-side comparison of IPD30N06S2L13ATMA4 by Infineon and IPD30N10S3L34ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD30N06S2L13ATMA4 - 55V 30A N-Channel OptiMOS MOSFET | Infineon
IPD30N06S2L13ATMA4 β ActiveInfineon
IPD30N10S3L34ATMA1 - 100V 30A N-Channel OptiMOS MOSFET | Infineon
IPD30N10S3L34ATMA1 β ActiveSpecification Comparison
| Parameter | IPD30N06S2L13ATMA4 | IPD30N10S3L34ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS | β |
| Channel Type | N-Channel | β |
| Mode | Enhancement | β |
| Drain-Source Voltage (Vds) | 55 V | β |
| Continuous Drain Current (Id) | 30 A (Tc) | β |
| Power Dissipation (Pd) | 136 W (Tc) | β |
| Package | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK-2 / SC-63) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55 Β°C to +175 Β°C (Tj) | β |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| MSL (Moisture Sensitivity Level) | MSL1 (per JEDEC J-STD-020, up to 260 Β°C peak reflow) | β |
| Lead-Free / RoHS | Yes (Green Package) | β |
| Avalanche Tested | 100 % production-tested | β |
| Technology | Planar (OptiMOS) | β |
| On-State Resistance (Rds(on)) | [DATA_NEEDED: exact typ/max Rds(on) at Vgs=10V and at Vgs=4.5V] | β |
| Gate-Source Threshold (Vgs(th)) | Logic-level (typ [DATA_NEEDED: Vth typ/min/max]) | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg @ Vgs=10V, Id=30A] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typ at Vds=25V] | β |
| Diode Reverse Recovery (trr) | [DATA_NEEDED: trr typ] | β |
| Pin Count | 3 (Drain tab + Gate + Source) | β |
| Tape and Reel Packaging | Yes (T&R per IEC 60286-3) | β |
| Product Family | β | OptiMOS-T2 |
| Transistor Type | β | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID, Tc=25Β°C) | β | 30 A |
| Pulsed Drain Current (IDM) | β | 180 A |
| Power Dissipation (PD, Tc=25Β°C) | β | 57 W |
| Drain-Source On-Resistance (RDS(on) max) | β | 31 mΞ© @ VGS=10 V |
| Gate-Source Threshold Voltage (VGS(th) typ) | β | 1.7 V (range 1.0 V to 2.5 V) |
| Total Gate Charge (Qg typ) | β | 23 nC |
| Operating Junction Temperature | β | -55Β°C to +175Β°C |
| MSL Level | β | 1 (JEDEC J-STD-020, 260Β°C peak reflow) |
| RoHS / REACH | β | Compliant |
| Lead-Free / Halogen-Free | β | Yes / Yes |
| Avalanche Rated | β | 100% Avalanche tested |