IPD30N06S2L13ATMA4 - 55V 30A N-Channel OptiMOS MOSFET | Infineon
MPN: IPD30N06S2L13ATMA4 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.18 | $1.18 |
| 10 | $1.02 | $10.20 |
| 100 | $0.86 | $86.00 |
| 500 | $0.71 | $355.00 |
| 1,000 | $0.59 | $590.00 |
| 2,500 | $0.48 | $1,200.00 |
Drop-in alternatives for IPD30N06S2L13ATMA4 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPD30N06S2L-13
✅ Drop-In📋 Reference alternative (not in catalog)
IPD30N08S2L21ATMA1
✅ Drop-In✓ In Stock
$0.48 / Unit
View Datasheet →IPD30N10S3L34ATMA1
✅ Drop-In✓ In Stock
$0.38 / Unit
View Datasheet →IPD30N10S3L34ATMA2
✅ Drop-In✓ In Stock
$0.92 / Unit
View Datasheet →IPD90N06S407ATMA2
✅ Drop-In✓ In Stock
$0.84 / Unit
View Datasheet →IPD30N06S2L13ATMA4 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Family | OptiMOS |
| Channel Type | N-Channel |
| Mode | Enhancement |
| Drain-Source Voltage (Vds) | 55 V |
| Continuous Drain Current (Id) | 30 A (Tc) |
| Power Dissipation (Pd) | 136 W (Tc) |
| Package | PG-TO252-3-11 (DPAK) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55 °C to +175 °C (Tj) |
| Automotive Qualification | AEC-Q101 qualified |
| MSL (Moisture Sensitivity Level) | MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) |
| Lead-Free / RoHS | Yes (Green Package) |
| Avalanche Tested | 100 % production-tested |
| Technology | Planar (OptiMOS) |
| Pin Count | 3 (Drain tab + Gate + Source) |
| Tape and Reel Packaging | Yes (T&R per IEC 60286-3) |
IPD30N06S2L13ATMA4 Pin Configuration
| Pin 1 | Gate — Gate drive input (logic-level) |
| Pin 2 | Drain (tab) — Drain terminal, connected to the metal tab on the back of the package for thermal dissipation |
| Pin 3 | Source — Source terminal, return path for gate and drain |
Safe Operating Area (estimated envelope based on 136W Tc rating)
Typical Applications
IPD30N06S2L13ATMA4 is suitable for 7 applications: 12V Automotive Solenoid and Valve Drivers, H-Bridge Motor Half-Stages (Bldc / Dc), Synchronous Rectifier for 12V/24V DC-DC Converters, Battery Protection and Load Switch, LED Driver Power Stage, Industrial 24V PLC and I/O Module Outputs, USB-PD and Auxiliary Power-Path Switching.
12V Automotive Solenoid and Valve Drivers
The IPD30N06S2L13ATMA4 is widely used as the low-side switch driving 12 V automotive solenoids, valves, and actuators inside ECUs. Its 30 A continuous drain current handles inrush transients from solenoid kick-off, while the 55 V Vds rating covers 12 V bus plus load-dump clamping margin. The logic-level Vgs(th) lets the part be driven directly from a 4.5 V microcontroller GPIO through a small gate resistor, eliminating a gate-driver IC. AEC-Q101 qualification and 175 °C Tj(max) deliver the reliability margin required by under-hood automotive environments with sustained 85 °C ambient. The DPAK footprint with exposed tab provides a low-thermal-resistance path to the PCB copper pour.
Recommended
H-Bridge Motor Half-Stages (Bldc / Dc)
The IPD30N06S2L13ATMA4 is well-matched to the low-side positions of an H-bridge driving small BLDC or brushed-DC motors in 12 V/24 V systems. Its 30 A continuous current supports motors up to several hundred watts, while the AEC-Q101 grade makes it suitable for automotive body-comfort modules (window, seat, fan, pump). Fast switching transitions minimize switching losses, but a 10-100 kΩ gate-source pull-down is recommended to prevent dv/dt-induced turn-on in the half-bridge deadtime. The DPAK footprint enables compact half-bridge layouts with shared thermal copper, and two of these parts can be paralleled for higher current stages without changing the land pattern.
Recommended
Synchronous Rectifier for 12V/24V DC-DC Converters
In non-isolated buck or buck-boost converters running from a 24 V industrial bus, the IPD30N06S2L13ATMA4 can serve as the synchronous rectifier (low-side) MOSFET. Its 55 V Vds rating covers 24 V nominal plus switching-node spikes, and the ultra-low Rds(on) of the OptiMOS family minimizes conduction losses during the synchronous-rectifier on-time, lifting overall converter efficiency by 1-3 percentage points versus a Schottky-diode rectifier. The logic-level gate drive allows direct PWM control from a buck-controller IC at 100-500 kHz. AEC-Q101 qualification is a bonus for industrial converters that must meet automotive-grade reliability in factory-automation or harsh-environment applications.
Recommended
Battery Protection and Load Switch
The IPD30N06S2L13ATMA4 functions as a high-current load-disconnect switch in 12 V battery management systems and UPS-style backup circuits. Its low Rds(on) reduces steady-state I²R loss when the load is connected, while its 30 A rating covers inrush from capacitive loads downstream of the disconnect. Reverse-battery protection can be implemented by placing the MOSFET in series with the load and pulling the gate to ground; the body diode naturally conducts during reverse-battery fault but the part survives because Vds remains bounded. The AEC-Q101 grade suits e-bike, e-scooter, and other light-electric-vehicle battery systems.
Recommended
LED Driver Power Stage
In constant-current LED drivers for automotive exterior lighting (DRL, fog, turn signal) or industrial high-bay luminaires, the IPD30N06S2L13ATMA4 acts as the main switching element in a buck or buck-boost topology. The 30 A rating supports LED strings drawing 5-10 A with PWM dimming up to 1 kHz without thermal issues, while the 55 V Vds easily handles the rectified 12 V/24 V mains plus switching transients. Logic-level Vgs(th) means the LED-driver IC can drive the gate directly through a small resistor, simplifying BOM and reducing cost. AEC-Q101 grade and 175 °C Tj(max) deliver the long-life margin needed for 50,000-hour luminaire designs.
Recommended
Industrial 24V PLC and I/O Module Outputs
The IPD30N06S2L13ATMA4 is well-suited to industrial PLC digital-output modules driving 24 V solenoids, relays, and indicator lamps. Its 55 V rating covers the 24 V nominal industrial bus plus transient suppression, and the 30 A continuous current supports multi-channel modules where several outputs may be active simultaneously. The logic-level gate allows direct drive from a 3.3 V or 5 V PLC-output stage, simplifying the I/O circuit. AEC-Q101 over-qualification gives extra margin for industrial environments with wide temperature swings and vibration. The DPAK footprint's large tab provides robust thermal dissipation when several outputs are stacked on a single heatsink.
Recommended
USB-PD and Auxiliary Power-Path Switching
In USB-PD chargers, e-mobility charging stations, and auxiliary power-path controllers, the IPD30N06S2L13ATMA4 can be used as the load-switch or ORing MOSFET on 12 V/24 V rails. Its low Rds(on) minimizes voltage drop and I²R loss in the always-on path, while the 30 A rating covers peak USB-PD 100 W / 240 W power levels at 20 V/28 V bus rails. The logic-level gate is compatible with USB-PD controller GPIO drive through a small gate resistor. AEC-Q101 grade benefits chargers installed in vehicles or e-bikes that must survive automotive transients. The DPAK package provides robust thermal performance at sustained high current.
Recommended
Recommended Products Summary
Engineering reference data for IPD30N06S2L13ATMA4 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD30N06S2L-13 | IPD30N08S2L21ATMA1 | IPD30N10S3L34ATMA1 | IPD30N10S3L34ATMA2 | IPD90N06S407ATMA2 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) |
| Drain-Source Voltage (Vds) | 55 V | 55 V | 75 V | 100 V | 100 V | 60 V |
| Continuous Drain Current (Id) | 30 A | 30 A | 30 A | 30 A | 30 A | 30 A |
| Power Dissipation (Pd) | 136 W (Tc) | 136 W (Tc) | 136 W (Tc) | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Automotive Grade (AEC-Q101) | Yes | No (industrial only) | Yes | Yes | Yes | Yes |
| Operating Junction Temperature | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C |
| Channel Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Logic-Level Vgs(th) | Yes | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- Lowest Rds(on) in 55 V OptiMOS DPAK class (vs IPD30N08S2L21ATMA1)
- Automotive-grade AEC-Q101 qualification in standard DPAK (vs IPD30N06S2L-13 (industrial variant))
- Logic-level gate drive directly from 4.5V GPIO (vs Standard-Vth 55V DPAK MOSFETs)
- MSL1 moisture rating simplifies SMT manufacturing (vs MSL3-rated competitor DPAK MOSFETs)
Design Notes
Estimated: at Id=30 A continuous and Vds=24 V steady-state (worst-case DC SOA), the part dissipates P = Vds × Id = 720 W if operated in linear mode, far exceeding the 136 W Tc rating. In actual switching applications (PWM duty cycle ≤ 100%), conduction loss dominates and is Pcond = I²_rms × Rds(on). At 30 A into 10 mΩ Rds(on) the loss is 9 W at 100 % duty. The DPAK package requires at least 1 square inch of 1 oz copper pour per ampere of continuous current to keep Tj rise below 50 °C above ambient. Add a topside thermal pad stitch if Tj approaches 150 °C in your application.
Use a DPAK land pattern compliant with IPC-7351 (TO-252 standard). The exposed tab must be soldered to a copper pour of at least 50 mm² to meet the 136 W power rating; smaller pours force the part into thermal shutdown under high current. Place the gate drive trace away from the drain switching node to minimize dv/dt-induced gate coupling. Add a 10-100 kΩ gate-source pull-down resistor to hold the MOSFET off during microcontroller reset or supply collapse. Input and output capacitors for the surrounding switching converter should be placed within 5 mm of the part's drain and source pads to minimize parasitic loop inductance.
Do not exceed 55 V Vds - the part will avalanche, but sustained operation beyond the absolute-maximum rating destroys the die. Do not drive the gate with more than ±20 V Vgs - the thin gate oxide will rupture. Always check SOA for pulsed operation: the DC SOA curve is more restrictive than pulsed SOA, and high-current short pulses can still push the die into thermal failure if repetition rate is too high. For automotive load-dump protection, add a TVS clamp or active transient suppressor; the IPD30N06S2L13ATMA4 alone does not have avalanche-energy rating to absorb a 35 V load-dump pulse.
For half-bridge layouts, minimize the high-side-to-low-side switching-node copper area to reduce EMI. Use a gate-drive loop area of less than 1 cm² by routing the gate trace directly over the source pad. Place a small (1-10 nF) ceramic bypass capacitor directly between Vcc of the gate driver and the source pin of the IPD30N06S2L13ATMA4 if driving at high dV/dt. For paralleled MOSFETs, use symmetric gate-source resistor placement and a shared gate-driver output to avoid current imbalance caused by threshold-voltage mismatch.
Compliance Information
RoHS-compliant Green Package per Infineon product page. AEC-Q101 qualified (automotive grade). Halogen-free per industry-standard Green Package designation. Lead-free reflow compatible with 260 °C peak per MSL1 rating.
