IPD30N10S3L34ATMA1 - 100V 30A N-Channel OptiMOS MOSFET | Infineon
MPN: IPD30N10S3L34ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.95 | $0.95 |
| 10 | $0.82 | $8.20 |
| 100 | $0.68 | $68.00 |
| 500 | $0.55 | $275.00 |
| 1,000 | $0.45 | $450.00 |
| 3,000 | $0.38 | $1,140.00 |
Drop-in alternatives for IPD30N10S3L34ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet →IPD30N10S3L34ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS-T2 |
| Transistor Type | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID, Tc=25°C) | 30 A |
| Pulsed Drain Current (IDM) | 180 A |
| Power Dissipation (PD, Tc=25°C) | 57 W |
| Drain-Source On-Resistance (RDS(on) max) | 31 mΩ @ VGS=10 V |
| Gate-Source Threshold Voltage (VGS(th) typ) | 1.7 V (range 1.0 V to 2.5 V) |
| Total Gate Charge (Qg typ) | 23 nC |
| Operating Junction Temperature | -55°C to +175°C |
| Package | PG-TO252-3-11 (DPAK-2 / SC-63) |
| Mounting Type | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified |
| MSL Level | 1 (JEDEC J-STD-020, 260°C peak reflow) |
| RoHS / REACH | Compliant |
| Lead-Free / Halogen-Free | Yes / Yes |
| Avalanche Rated | 100% Avalanche tested |
IPD30N10S3L34ATMA1 Pin Configuration
| Pin 1 | Gate — Gate drive input; controls drain-source conduction |
| Pin 2 | Drain — Main current terminal; internally connected to the tab |
| Pin 3 | Source — Source terminal; reference for gate drive |
| Pin Tab | Drain (Tab) — Drain terminal exposed on the package underside for thermal dissipation and PCB mounting |
Safe Operating Area (DC, Tj=175°C)
Typical Applications
IPD30N10S3L34ATMA1 is suitable for 6 applications: 12V/24V Automotive Load Switching, DC-DC Converter Main / Synchronous Switch, Automotive Motor Drive (H-Bridge / Half-Bridge), Battery Management System (BMS) Protection Switch, Industrial Solenoid and Relay Replacement, LED Headlamp Matrix Switch.
12V/24V Automotive Load Switching
The IPD30N10S3L34ATMA1 is purpose-built for automotive load-switch applications on 12 V and 24 V vehicle buses. Its 100 V VDS rating provides ample margin against 35 V load-dump transients per ISO 7637-2, while the 31 mΩ RDS(on) at 10 V VGS keeps conduction loss below 3 W at 10 A continuous current. The AEC-Q101 qualification and 175°C junction-temperature rating suit under-hood environments where ambient temperatures exceed 125°C. Designers use the part as a high-side or low-side switch for headlamp modules, seat-heater pads, and infotainment power distribution. The PG-TO252-3-11 footprint also supports automated optical inspection (AOI) on high-volume automotive assembly lines, and the 100% avalanche-tested rating protects against the inductive kickback of solenoids and motors.
Recommended
DC-DC Converter Main / Synchronous Switch
In 48 V-to-12 V or 24 V-to-12 V buck converters, the IPD30N10S3L34ATMA1 functions as the main switching element or the synchronous-rectifier MOSFET. The 31 mΩ RDS(on) and 23 nC total gate charge yield a figure-of-merit (FOM = RDS(on) × Qg) that enables switching frequencies up to 250 kHz without excessive driver loss. At 5 A output current the conduction loss is roughly 0.78 W, easily handled by the DPAK tab soldered to 25 mm² of 2 oz copper. Compared to using a Schottky rectifier, the synchronous-rectifier topology improves efficiency by 4-6% at full load. The 100 V VDS also provides 2× safety margin against ringing on the switch node when driving the MOSFET at 24 V input.
Recommended
Automotive Motor Drive (H-Bridge / Half-Bridge)
Electric power-steering, water pumps, oil pumps, and HVAC blower motors in modern vehicles commonly use the IPD30N10S3L34ATMA1 as the low-side switch in a half-bridge or the full four-MOSFET H-bridge. The 180 A pulsed current capability handles the inrush of stalled-rotor conditions, while the 100% avalanche rating protects against the back-EMF when PWM-switching inductive motor windings at 25 kHz. At 10 A continuous phase current the part dissipates approximately 3.1 W and can be cooled by the same aluminum heat-spreader that cools the companion high-side MOSFET. The TO-252 footprint also enables symmetrical PCB layouts where parallel devices share the same copper pour. Compared to IGBTs at this power level, the OptiMOS delivers 3-5× faster switching and 30% lower conduction loss.
Recommended
Battery Management System (BMS) Protection Switch
In 12 V and 48 V mild-hybrid battery-management systems, the IPD30N10S3L34ATMA1 serves as the pack-protection disconnect switch. Its 31 mΩ RDS(on) and 30 A continuous current support 1 kW discharge paths with minimal voltage drop, and the 100 V VDS withstands the transient over-voltage events that occur during load-dump recovery. The intrinsic body diode also provides reverse-battery protection when paired with an external fuse or PTC. AEC-Q101 qualification ensures the part survives 1000 thermal cycles between -55°C and +150°C as required by automotive battery validation. Compared to electromechanical contactors, the solid-state MOSFET enables silent switching at sub-millisecond speeds, eliminating audible relay clicks in cabin-mounted BMS units.
Recommended
Industrial Solenoid and Relay Replacement
In industrial automation the IPD30N10S3L34ATMA1 replaces electromechanical relays and solenoids with silent, solid-state switching. The 100 V VDS tolerates 24 V and 48 V industrial bus rails plus inductive kickback from relay coils and solenoid valves. Its 31 mΩ RDS(on) at 10 V VGS keeps steady-state dissipation below 1 W at 5 A load, eliminating the heatsinks required by older DPAK parts. The AEC-Q101 automotive-grade reliability is overkill for industrial but ensures decades-long MTBF in factory-floor environments. Compared to a 5 A mechanical relay rated for 100k cycles, the MOSFET delivers effectively unlimited switching cycles at sub-100 µs response times, enabling high-precision PWM solenoid control for hydraulic valves and pneumatic actuators.
Recommended
LED Headlamp Matrix Switch
Adaptive-driving-beam (ADB) LED matrix headlamps use the IPD30N10S3L34ATMA1 as the per-LED pixel switch in 84-pixel and 100-pixel arrays. The MOSFET's 100 V VDS easily handles the 13.5 V nominal automotive supply with margin, while the 31 mΩ RDS(on) keeps LED-current regulation accurate to within 1% at the 1.5 A per-pixel drive current typical of high-beam LEDs. The TO-252 package's small footprint enables the dense pixel layout required for matrix headlamp PCBs, and the 100% avalanche rating protects against the inductive transients produced by the matrix-driver board's shared DC-DC converter. Compared to discrete BJT switches, the MOSFET eliminates the base-current loss and simplifies the LED-driver PCB to a low-impedance ground-referenced topology.
Recommended
Recommended Products Summary
Engineering reference data for IPD30N10S3L34ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD082N10N3GATMA1 | IPD70N10S312ATMA1 | IPD60R280P7SAUMA1 | IPD33CN10NGATMA1 | BSC077N12NS3GATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TO252-3-11 (DPAK-2) | PG-TO252-3-11 (DPAK-2) - same | PG-TO252-3-11 (DPAK-2) - same | PG-TO252-3-11 (DPAK-2) - same | PG-TO252-3-11 (DPAK-2) - same | PG-TO252-3-11 (DPAK-2) - same |
| VDS (Drain-Source Voltage) | 100 V | 100 V | 100 V | 600 V (HV class) | 100 V | 120 V |
| Continuous Drain Current (Tc=25°C) | 30 A | 40 A | 70 A | 10 A | 33 A | 50 A |
| RDS(on) max @ VGS=10V | 31 mΩ | 8.2 mΩ | 28 mΩ | 280 mΩ | 33 mΩ | 7.7 mΩ |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Total Gate Charge (Qg typ) | 23 nC | 29 nC | 85 nC | 32 nC | 27 nC | 55 nC |
| Max Junction Temperature | 175°C | 175°C | 175°C | 150°C | 175°C | 175°C |
Key Differentiators
- Highest pulsed drain current in 100V DPAK OptiMOS class (vs IPD082N10N3GATMA1)
- Lower RDS(on) than higher-current alternatives (vs IPD70N10S312ATMA1)
- 100 V VDS matches automotive 24V transients (vs IPD034N06N3GATMA1)
- Lower gate charge than 120V OptiMOS (vs BSC077N12NS3GATMA1)
Design Notes
The PG-TO252-3-11 (DPAK) tab is the primary thermal path and must be soldered to a copper pad of at least 25 mm² on the top PCB layer to keep RthJA below 50 K/W. Estimated: at 5 A continuous load the device dissipates approximately 5 W (P = I² × RDS(on) = 25 × 0.031), producing roughly 130°C junction temperature rise above a 25°C ambient, which sits within the 175°C SOA. For 10 A continuous operation, dissipation climbs to roughly 3.1 W per the RDS(on) figure, manageable on standard 2 oz copper. Use thermal vias under the tab to inner-layer copper spreads for high-current applications exceeding 8 A continuous.
Place the gate-drive resistor (typically 10-100 Ω) within 5 mm of the gate pin to prevent parasitic inductance from causing gate-oscillation at high dV/dt. The source pin should be connected to a low-impedance ground plane to minimize source-inductance-induced gate-voltage ringing during switching transitions. For high-frequency (>100 kHz) operation, use a Kelvin-source connection by routing the gate-return path directly to the source pin rather than through the tab. Add a 10 kΩ gate-source pull-down resistor to keep the MOSFET off during MCU power-up or floating-GND fault conditions.
Keep the high-current drain-source loop area as small as possible to minimize parasitic inductance, which causes voltage overshoot during turn-off and can exceed the 100 V VDS rating. Place input bulk capacitors as close as physically possible to the drain tab for high-current switching topologies. For half-bridge circuits (synchronous-rectifier or motor-drive), maintain symmetric PCB layout between the high-side and low-side MOSFETs to balance thermal distribution. The exposed tab on PG-TO252-3-11 also provides the drain electrical connection, so verify the drain copper pour does not short to the gate or source traces.
Do not drive the gate above the absolute maximum VGS rating of ±20 V, as this can rupture the thin gate oxide. Use a 12 V Zener clamp across gate-source for protection against gate-driver transients. Do not exceed the 100 V VDS rating even transiently — avalanche operation is permitted but repetitive avalanche events degrade the part. Verify that the operating junction temperature stays below 175°C; thermal-shutdown is NOT built into discrete MOSFETs and the part will fail catastrophically if Tjmax is exceeded. For pulsed loads, derate per the safe-operating-area (SOA) curve in the datasheet, not the continuous current rating.
Compliance Information
AEC-Q101 automotive-qualified per Infineon OptiMOS-T2 datasheet (MSL1, 175°C Tjmax). Green product per manufacturer declaration. RoHS/REACH compliant.
