IPD33CN10NGATMA1 - 100V N-Ch OptiMOS MOSFET | Infineon | PG-TO252
MPN: IPD33CN10NGATMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.95 | $0.95 |
| 10 | $0.78 | $7.80 |
| 100 | $0.59 | $59.00 |
| 500 | $0.46 | $230.00 |
| 1,000 | $0.38 | $380.00 |
| 2,500 | $0.32 | $800.00 |
Drop-in alternatives for IPD33CN10NGATMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IPD33CN10N G
β Drop-Inπ Reference alternative (not in catalog)
IPD90N03D4GATMA1
β Drop-Inπ Reference alternative (not in catalog)
BSC117N08NS5ATMA1
β Drop-Inβ In Stock
$0.46 / Unit
View Datasheet βNTD6416AN
β Drop-Inπ Reference alternative (not in catalog)
SUM45N25-72
β Drop-Inπ Reference alternative (not in catalog)
IPD33CN10NGATMA1 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID, Tc) | 27 A |
| Power Dissipation (PD, Tc) | 58 W |
| Technology | OptiMOS (Trench) |
| Package | PG-TO252-3 (DPAK), Surface Mount |
| Pin Count | 3 (Gate, Drain, Source) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55C to +175C (TJ) |
| RoHS Status | Compliant |
| Lead-Free | Yes |
| MSL Level | 1 |
IPD33CN10NGATMA1 Pin Configuration
| Pin 1 | Gate (G) β MOSFET gate drive input; 10V VGS recommended for full RDS(on) |
| Pin 2 | Drain (D) β MOSFET drain; also connected to the exposed metal tab |
| Pin 3 | Source (S) β MOSFET source; reference for gate drive |
Safe Operating Area (DC, TC=25C)
Typical Applications
IPD33CN10NGATMA1 is suitable for 6 applications: 48V Telecom DC-DC Converters, 24V/36V Industrial Motor Drives, Solar Inverter Auxiliary Converters, Automotive 12V/24V Load Switching, Hot-Swap and OR-ing Controllers, Battery Management and Protection.
48V Telecom DC-DC Converters
The IPD33CN10NGATMA1 fits 48V nominal telecom DC-DC converters as the primary-side switch or synchronous rectifier. With 100V VDS rating and 27A continuous current, it provides ample headroom above the 48V bus while the OptiMOS trench technology delivers low RDS(on) to maximize efficiency at full load. Its 58W power dissipation and PG-TO252-3 thermal pad support the typical 50-150W brick converter power range. The low gate charge reduces driver losses at the 100-300 kHz switching frequencies common in isolated telecom bricks. Place the part on a 1+ square-inch copper pour to achieve rated thermal performance and consider a snubber for secondary-side rectifier ringing.
Recommended
24V/36V Industrial Motor Drives
The IPD33CN10NGATMA1 serves as a half-bridge switch in 24V/36V brushed DC and low-power BLDC motor drives. The 100V rating comfortably exceeds the 36V industrial rail maximum plus inductive spike margin, while the 27A continuous current handles motors up to ~500W mechanical output. The OptiMOS low RDS(on) reduces I2R conduction losses during PWM operation at 20-50 kHz, improving drive efficiency and reducing heatsink requirements. The PG-TO252-3 package is well-suited for hand-tool, e-bike controller, and small-appliance motor drive designs where a compact SMT solution is preferred over through-hole TO-220 parts.
Recommended
Solar Inverter Auxiliary Converters
The IPD33CN10NGATMA1 works in solar inverter auxiliary power supplies and small DC optimizers. With 100V VDS, it tolerates the open-circuit voltage spikes of 60-72V solar panel strings and the ringing of coupled inductors in flyback/forward topologies. The 58W dissipation supports 100-200W auxiliary converter designs. For micro-inverter and power-optimizer applications, the surface-mount PG-TO252-3 package enables fully automated assembly and reduces labor cost versus through-hole alternatives. Designers should add TVS protection at the drain for lightning-induced transients typical in outdoor PV installations.
Recommended
Automotive 12V/24V Load Switching
The IPD33CN10NGATMA1 functions as a high-current load switch in 12V/24V automotive body electronics and power distribution modules. Its 100V VDS handles load-dump transients up to 35V (12V system) or 58V (24V truck system) per ISO 7637-2 with adequate margin. While not AEC-Q101 qualified, the part is widely used in non-safety automotive applications including lighting drivers, seat heaters, and accessory power outlets. The OptiMOS technology's low gate charge enables direct microcontroller GPIO driving with a small gate resistor. For AEC-Q100 designs, consider the automotive-grade Infineon OptiMOS equivalents in the same DPAK footprint.
Recommended
Hot-Swap and OR-ing Controllers
The IPD33CN10NGATMA1 enables -48V telecom hot-swap and redundant power OR-ing applications where the 100V VDS provides safe margin above the -48V bus. The low RDS(on) of the OptiMOS technology minimizes power dissipation during steady-state operation, while the fast switching supports active current-limiting in hot-swap controllers. Use this part with a dedicated hot-swap controller IC (such as the Infineon ITS series) to provide inrush current limiting, circuit-breaker protection, and undervoltage lockout. For N+1 redundant -48V distribution, two IPD33CN10NGATMA1 in parallel via source-side OR-ing diodes or active MOSFET controllers deliver robust load sharing.
Recommended
Battery Management and Protection
The IPD33CN10NGATMA1 operates as a charge/discharge FET in multi-cell battery packs for e-bikes, portable power tools, and small UPS systems. The 100V VDS accommodates 14-20S Li-ion packs (50-72V nominal) with comfortable transient margin. The 27A continuous rating supports 10-15A continuous discharge at 48V nominal. The low RDS(on) minimizes I2R losses that would otherwise waste battery capacity and cause heating during high-current discharge. Designers should add a dedicated battery protection IC and TVS clamp for overvoltage, undervoltage, and short-circuit conditions per IEC 62133 safety standards.
Recommended
Recommended Products Summary
Engineering reference data for IPD33CN10NGATMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD33CN10N G | IPD90N03D4GATMA1 | BSC117N08NS5ATMA1 | NTD6416AN | SUM45N25-72 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | onsemi | Vishay Intertechnology |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TDSON-8 (SuperSO8) - different | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 30 V | 80 V | 100 V | 250 V |
| Continuous Drain Current (ID, Tc) | 27 A | 27 A | 90 A | 100 A | [DATA_NEEDED] | [DATA_NEEDED] |
| Power Dissipation (PD, Tc) | 58 W | 58 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Technology | OptiMOS 100V Trench | OptiMOS 100V Trench | OptiMOS Trench | OptiMOS 5 | Trench | Trench |
| FET Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| RoHS / Lead-Free | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes |
Key Differentiators
- OptiMOS 100V technology with 30% RDS(on) and FOM reduction versus prior generations (vs Older Infineon 100V MOSFET generations (e.g. IPD90N03D4GATMA1))
- Standardized DPAK footprint enables drop-in sourcing across multiple vendors (vs BSC117N08NS5ATMA1 (PG-TDSON-8 SuperSO8 footprint))
- 100V VDS rating matches the 48V telecom / 36V industrial envelope with comfortable margin (vs Higher-VDS alternatives like SUM45N25-72 (250V))
Design Notes
Estimated: the IPD33CN10NGATMA1 is rated 58W at case temperature Tc=25C. With a typical PG-TO252-3 junction-to-ambient thermal resistance of 50-62 C/W on a 1 sq-inch copper pour (JEDEC EIA/JESD51 standard test board), the part dissipates roughly 1.6-2.0W maximum before reaching 125C junction at 25C ambient. For continuous 27A operation, expect significant derating - design the copper area to keep Tj below 100C for long-term reliability. Always consult the manufacturer's thermal curves for your specific PCB layout.
The PG-TO252-3 (DPAK) exposed tab is the drain and must be soldered to a copper pour for both electrical connection and thermal dissipation. Use multiple thermal vias under the tab to spread heat to inner PCB layers. Place the gate drive resistor (10-100 ohm) close to the gate pin to suppress ringing, and minimize the gate-source loop inductance to prevent dv/dt-induced false turn-on in half-bridge configurations.
Keep the high-current drain loop (input cap -> drain -> source -> input cap) physically small to minimize parasitic inductance that causes voltage spikes during switching. Place a small RC snubber (10-100 ohm + 1-10 nF) across drain-source if ringing exceeds 80% of VDS. For synchronous rectifier applications, ensure dead-time control prevents shoot-through by leaving 50-200 ns margin between high-side and low-side gate transitions.
Do not assume the 27A rating is achievable without substantial PCB copper - real designs typically see 5-10A continuous before thermal limits engage. The OptiMOS technology requires 10V VGS for full RDS(on) benefit; lower gate drive (5V logic-level) will significantly increase conduction losses. For 100V applications, never exceed the absolute maximum VDS rating of 100V - allow 20-30% margin for inductive transients in switching topologies.
Compliance Information
RoHS and lead-free per Infineon product page. Not AEC-Q100 qualified - select automotive-grade Infineon OptiMOS variants for AEC-Q100 designs. Halogen-free status not explicitly stated in verified web data.
